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Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy
Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy
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Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy

Xu, Xiaoqing ; Liu, Xianglin ; Guo, Yan ; Wang, Jun ; Song, Huaping ; Yang, Shaoyan ; Wei, Hongyuan ; Zhu, Qinsheng ; Wang, Zhanguo

Journal of applied physics, 2010-05, Vol.107 (10), p.104510-104510-6 [Periódico revisado por pares]

American Institute of Physics

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2
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
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Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth

Li, Zhiwei ; Wei, Hongyuan ; Xu, Xiaoqing ; Zhao, Guijuan ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Journal of crystal growth, 2012-06, Vol.348 (1), p.10-14 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
Dislocation scattering in AlxGa1−xN∕GaN heterostructures
Dislocation scattering in AlxGa1−xN∕GaN heterostructures
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Dislocation scattering in AlxGa1−xN∕GaN heterostructures

Xu, Xiaoqing ; Liu, Xianglin ; Han, Xiuxun ; Yuan, Hairong ; Wang, Jun ; Guo, Yan ; Song, Huaping ; Zheng, Gaolin ; Wei, Hongyuan ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Applied physics letters, 2008-11, Vol.93 (18) [Periódico revisado por pares]

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4
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
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MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers

Zhang, Biao ; Song, Huaping ; Wang, Jun ; Jia, Caihong ; Liu, Jianming ; Xu, Xiaoqing ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Journal of crystal growth, 2011-03, Vol.319 (1), p.114-117 [Periódico revisado por pares]

Amsterdam: Elsevier

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5
The role of zinc dopant and the temperature effect on the controlled growth of InN nanorods in metal–organic chemical vapor deposition system
The role of zinc dopant and the temperature effect on the controlled growth of InN nanorods in metal–organic chemical vapor deposition system
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The role of zinc dopant and the temperature effect on the controlled growth of InN nanorods in metal–organic chemical vapor deposition system

Song, Huaping ; Guo, Yan ; Yang, Anli ; Wei, Hongyuan ; Xu, Xiaoqing ; Liu, Jianming ; Yang, Shaoyan ; Liu, Xianglin ; Zhu, Qinsheng ; Wang, Zhanguo

CrystEngComm, 2010-01, Vol.12 (11), p.3936 [Periódico revisado por pares]

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6
Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods
Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods
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Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods

Li, Zhiwei ; Xu, Xiaoqing ; Wang, Jun ; Liu, Jianming ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Physica. E, Low-dimensional systems & nanostructures, 2010-11, Vol.43 (1), p.543-546 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD
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Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD

Zhang, Biao ; Song, Huaping ; Xu, Xiaoqing ; Liu, Jianming ; Wang, Jun ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Nanotechnology, 2011-06, Vol.22 (23), p.235603-235603 [Periódico revisado por pares]

England: IOP Publishing

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8
Dislocation core effect scattering in a quasitriangle potential well
Dislocation core effect scattering in a quasitriangle potential well
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Dislocation core effect scattering in a quasitriangle potential well

Xu, Xiaoqing ; Liu, Xianglin ; Yang, Shaoyan ; Liu, Jianming ; Wei, Hongyuan ; Zhu, Qinsheng ; Wang, Zhanguo

Applied physics letters, 2009-03, Vol.94 (11), p.112102-112102-3 [Periódico revisado por pares]

American Institute of Physics

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9
Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters
Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters
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Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters

Song, Yafeng ; Lu, Yanwu ; Zhang, Biao ; Xu, Xiaoqing ; Wang, Jun ; Guo, Yan ; Shi, Kai ; Li, Zhiwei ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, Qinsheng ; Wang, Zhanguo

Journal of applied physics, 2010-10, Vol.108 (8), p.083112-083112-10 [Periódico revisado por pares]

American Institute of Physics

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10
GaN grown with InGaN as a weakly bonded layer
GaN grown with InGaN as a weakly bonded layer
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GaN grown with InGaN as a weakly bonded layer

Xu, Xiaoqing ; Guo, Yan ; Liu, Xianglin ; Liu, Jianming ; Song, Huaping ; Zhang, Biao ; Wang, Jun ; Yang, Shaoyan ; Wei, Hongyuan ; Zhu, Qinsheng ; Wang, Zhanguo

CrystEngComm, 2011-01, Vol.13 (5), p.158-1585 [Periódico revisado por pares]

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