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Refinado por: autor: Wang, Xinqiang remover
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Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms
Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms
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Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Wang, Jiaming ; Xu, Fujun ; Liu, Baiyin ; Lang, Jing ; Zhang, Na ; Kang, Xiangning ; Qin, Zhixin ; Yang, Xuelin ; Wang, Xinqiang ; Ge, Weikun ; Shen, Bo

Applied physics letters, 2021-04, Vol.118 (16) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping
Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping
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Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Wang, Jiaming ; Wang, Mingxing ; Xu, Fujun ; Liu, Baiyin ; Lang, Jing ; Zhang, Na ; Kang, Xiangning ; Qin, Zhixin ; Yang, Xuelin ; Wang, Xinqiang ; Ge, Weikun ; Shen, Bo

Light, science & applications, 2022-03, Vol.11 (1), p.71-71, Article 71 [Periódico revisado por pares]

England: Springer Nature B.V

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3
High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography
High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography
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High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

Zhang, Lisheng ; Xu, Fujun ; Wang, Jiaming ; He, Chenguang ; Guo, Weiwei ; Wang, Mingxing ; Sheng, Bowen ; Lu, Lin ; Qin, Zhixin ; Wang, Xinqiang ; Shen, Bo

Scientific reports, 2016-11, Vol.6 (1), p.35934-35934, Article 35934 [Periódico revisado por pares]

England: Nature Publishing Group

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4
Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes
Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes
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Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

Liu, Fang ; Zhang, Zhihong ; Rong, Xin ; Yu, Ye ; Wang, Tao ; Sheng, Bowen ; Wei, Jiaqi ; Zhou, Siyuan ; Yang, Xuelin ; Xu, Fujun ; Qin, Zhixin ; Zhang, Yuantao ; Liu, Kaihui ; Shen, Bo ; Wang, Xinqiang

Advanced functional materials, 2020-05, Vol.30 (22), p.n/a [Periódico revisado por pares]

Hoboken: Wiley Subscription Services, Inc

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5
High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition
High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition
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High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition

Wang, Jiaming ; Xu, Fujun ; He, Chenguang ; Zhang, Lisheng ; Lu, Lin ; Wang, Xinqiang ; Qin, Zhixin ; Shen, Bo

Scientific reports, 2017-02, Vol.7 (1), p.42747-42747, Article 42747 [Periódico revisado por pares]

England: Nature Publishing Group

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6
Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires
Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires
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Cathodoluminescence nano-characterization of individual GaN/AlN quantum disks embedded in nanowires

Sheng, Bowen ; Bertram, Frank ; Schmidt, Gordon ; Veit, Peter ; Müller, Marcus ; Wang, Ping ; Sun, Xiaoxiao ; Qin, Zhixin ; Shen, Bo ; Wang, Xinqiang ; Christen, Jürgen

Applied physics letters, 2020-09, Vol.117 (13) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Lattice‐Symmetry‐Driven Epitaxy of Hierarchical GaN Nanotripods
Lattice‐Symmetry‐Driven Epitaxy of Hierarchical GaN Nanotripods
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Lattice‐Symmetry‐Driven Epitaxy of Hierarchical GaN Nanotripods

Wang, Ping ; Wang, Xinqiang ; Wang, Tao ; Tan, Chih‐Shan ; Sheng, Bowen ; Sun, Xiaoxiao ; Li, Mo ; Rong, Xin ; Zheng, Xiantong ; Chen, Zhaoying ; Yang, Xuelin ; Xu, Fujun ; Qin, Zhixin ; Zhang, Jian ; Zhang, Xixiang ; Shen, Bo

Advanced functional materials, 2017-03, Vol.27 (9), p.np-n/a [Periódico revisado por pares]

Hoboken: Wiley Subscription Services, Inc

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8
High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure
High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure
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High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

Rong, Xin ; Wang, Xinqiang ; Ivanov, Sergey V. ; Jiang, Xinhe ; Chen, Guang ; Wang, Ping ; Wang, Weiying ; He, Chenguang ; Wang, Tao ; Schulz, Tobias ; Albrecht, Martin ; Jmerik, Valentin N. ; Toropov, Alexey A. ; Ratnikov, Viacheslav V. ; Kozlovsky, Vladimir I. ; Martovitsky, Victor P. ; Jin, Peng ; Xu, Fujun ; Yang, Xuelin ; Qin, Zhixin ; Ge, Weikun ; Shi, Junjie ; Shen, Bo

Advanced materials (Weinheim), 2016-09, Vol.28 (36), p.7978-7983 [Periódico revisado por pares]

Germany: Blackwell Publishing Ltd

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9
Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs
Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs
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Positive temperature coefficient of photovoltaic efficiency in solar cells based on InGaN/GaN MQWs

Chen, Zhaoying ; Zheng, Xiantong ; Li, Zhilong ; Wang, Ping ; Rong, Xin ; Wang, Tao ; Yang, Xuelin ; Xu, Fujun ; Qin, Zhixin ; Ge, Weikun ; Shen, Bo ; Wang, Xinqiang

Applied physics letters, 2016-08, Vol.109 (6) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system
Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system
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Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

He, Chenguang ; Qin, Zhixin ; Xu, Fujun ; Zhang, Lisheng ; Wang, Jiaming ; Hou, Mengjun ; Zhang, Shan ; Wang, Xinqiang ; Ge, Weikun ; Shen, Bo

Scientific reports, 2016-04, Vol.6 (1), p.25124-25124, Article 25124 [Periódico revisado por pares]

England: Nature Publishing Group

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