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Voltage-tunable terahertz and infrared photodetectors based on double-graphene-layer structures

Ryzhii, V ; Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow 111005 ; Otsuji, T ; Aleshkin, V. Ya ; Dubinov, A. A ; Ryzhii, M ; Mitin, V ; Shur, M. S

Applied Physics Letters, 21 April 2014, Vol.104(16) [Periódico revisado por pares]

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Negative terahertz conductivity in remotely doped graphene bilayer heterostructures

Ryzhii, V ; Institute of Ultra High Frequency Semiconductor Electronics of Ras, and Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University, Moscow 111005 ; Ryzhii, M ; Mitin, V ; Shur, M. S ; Otsuji, T

Journal of Applied Physics, 14 November 2015, Vol.118(18) [Periódico revisado por pares]

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Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors

Ryzhii, V ; Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University and Institute of Ultra High Frequency Semiconductor Electronics of Ras, Moscow 111005 ; Otsuji, T ; Ryzhii, M ; Mitin, V ; Shur, M. S

Journal of Applied Physics, 28 November 2015, Vol.118(20) [Periódico revisado por pares]

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Vertical electron transport in van der Waals heterostructures with graphene layers

Ryzhii, V ; Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University and Institute of Ultra High Frequency Semiconductor Electronics of Ras, Moscow 111005 ; Otsuji, T ; Ryzhii, M ; Aleshkin, V. Ya ; Dubinov, A. A ; Mitin, V ; Department of Electrical Engineering, University At Buffalo, Buffalo, New York 1460-1920 ; Shur, M. S

Journal of Applied Physics, 21 April 2015, Vol.117(15) [Periódico revisado por pares]

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Deste Autor:

  1. Ryzhii, M
  2. Shur, MS
  3. Shur, M. S
  4. Otsuji, T
  5. Mitin, V

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