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Impact of chloride surface treatment on nano-porous GaN structure for enhanced water-splitting efficiency
Impact of chloride surface treatment on nano-porous GaN structure for enhanced water-splitting efficiency
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Impact of chloride surface treatment on nano-porous GaN structure for enhanced water-splitting efficiency

Son, Hoki ; Park, Jee Hye ; Uthirakumar, Periyayya ; Kuznetsov, Andrej Yu ; Lee, In-Hwan

Applied surface science, 2020-12, Vol.532, p.147465, Article 147465 [Periódico revisado por pares]

Elsevier B.V

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2
Impact of porosity on the structural and optoelectronic properties of nanoporous GaN double layer fabricated via combined electrochemical and photoelectrochemical etching
Impact of porosity on the structural and optoelectronic properties of nanoporous GaN double layer fabricated via combined electrochemical and photoelectrochemical etching
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Impact of porosity on the structural and optoelectronic properties of nanoporous GaN double layer fabricated via combined electrochemical and photoelectrochemical etching

Son, Hoki ; Uthirakumar, Periyayya ; Polyakov, A.Y. ; Park, Jae Hong ; Lee, Kang Hyun ; Lee, In-Hwan

Applied surface science, 2022-08, Vol.592, p.153248, Article 153248 [Periódico revisado por pares]

Elsevier B.V

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Influence of Ga-halogen bond formation at the interface of nanoporous GaN photoelectrodes for enhanced photoelectrochemical water splitting efficiency
Influence of Ga-halogen bond formation at the interface of nanoporous GaN photoelectrodes for enhanced photoelectrochemical water splitting efficiency
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Influence of Ga-halogen bond formation at the interface of nanoporous GaN photoelectrodes for enhanced photoelectrochemical water splitting efficiency

Son, Hoki ; Uthirakumar, Periyayya ; Chung, Tae-Hoon ; Polyakov, A.Y. ; Lee, In-Hwan

Applied surface science, 2021-05, Vol.547, p.149105, Article 149105 [Periódico revisado por pares]

Elsevier B.V

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4
Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN
Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN
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Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN

Polyakov, A.Y. ; Smirnov, N.B. ; Yakimov, E.B. ; Tarelkin, S.A. ; Turutin, A.V. ; Shemerov, I.V. ; Pearton, S.J. ; Bae, Kang-Bin ; Lee, In-Hwan

Journal of alloys and compounds, 2016-11, Vol.686, p.1044-1052 [Periódico revisado por pares]

Elsevier B.V

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5
Dislocations introduced in n-GaN at room temperature cause conductivity inversion
Dislocations introduced in n-GaN at room temperature cause conductivity inversion
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Dislocations introduced in n-GaN at room temperature cause conductivity inversion

Yakimov, Eugene B. ; Vergeles, Pavel S. ; Polyakov, Alexander Y. ; Shchemerov, Ivan V. ; Chernyh, A.V. ; Vasilev, A.A. ; Kochkova, A.I. ; Lee, In-Hwan ; Pearton, S.J.

Journal of alloys and compounds, 2021-10, Vol.877, p.160281, Article 160281 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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6
Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells
Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells
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Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells

Polyakov, A.Y. ; Alexanyan, L.A. ; Skorikov, M.L. ; Chernykh, A.V. ; Shchemerov, I.V. ; Murashev, V.N. ; Kim, Tae-Hwan ; Lee, In-Hwan ; Pearton, S.J.

Journal of alloys and compounds, 2021-07, Vol.868, p.159211, Article 159211 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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7
Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress
Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress
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Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress

Vergeles, P.S. ; Orlov, V.I. ; Polyakov, A.Y. ; Yakimov, E.B. ; Kim, Taehwan ; Lee, In-Hwan

Journal of alloys and compounds, 2019-03, Vol.776, p.181-186 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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8
Estimations of Activation Energy for Dislocation Mobility in p-GaN
Estimations of Activation Energy for Dislocation Mobility in p-GaN
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Estimations of Activation Energy for Dislocation Mobility in p-GaN

Orlov, V. I. ; Polyakov, A.Y. ; Vergeles, P. S. ; Yakimov, E. B. ; Kim, Gyu Cheol ; Lee, In-Hwan

ECS journal of solid state science and technology, 2021-02, Vol.10 (2), p.26004 [Periódico revisado por pares]

IOP Publishing

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9
Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings
Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings
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Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings

Jang, Lee-Woon ; Jeon, Dae-Woo ; Chung, Tae-Hoon ; Polyakov, Alexander Y ; Cho, Han-Su ; Yun, Jin-Hyeon ; Ju, Jin-Woo ; Baek, Jong-Hyeob ; Choi, Joo-Won ; Lee, In-Hwan

ACS applied materials & interfaces, 2014-01, Vol.6 (2), p.985-989 [Periódico revisado por pares]

United States: American Chemical Society

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10
Electron irradiation of near‐UV GaN/InGaN light emitting diodes
Electron irradiation of near‐UV GaN/InGaN light emitting diodes
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Electron irradiation of near‐UV GaN/InGaN light emitting diodes

Lee, In‐Hwan ; Polyakov, Alexander Y. ; Smirnov, N. B. ; Shchemerov, I. V. ; Shmidt, N. M. ; Tal'nishnih, N. A. ; Shabunina, E. I. ; Cho, Han‐Su ; Hwang, Sung‐Min ; Zinovyev, R. A. ; Didenko, S. I. ; Lagov, P. B. ; Pearton, S. J.

Physica status solidi. A, Applications and materials science, 2017-10, Vol.214 (10), p.n/a [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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