Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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First-Principles Study of CuGaO2 Polymorphs: Delafossite α‑CuGaO2 and Wurtzite β‑CuGaO2Suzuki, Issei ; Nagatani, Hiraku ; Kita, Masao ; Iguchi, Yuki ; Sato, Chiyuki ; Yanagi, Hiroshi ; Ohashi, Naoki ; Omata, TakahisaInorganic chemistry, 2016-08, Vol.55 (15), p.7610-7616 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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2 |
Material Type: Artigo
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First principles calculations of ternary wurtzite β-CuGaO2Suzuki, Issei ; Nagatani, Hiraku ; Kita, Masao ; Iguchi, Yuki ; Sato, Chiyuki ; Yanagi, Hiroshi ; Ohashi, Naoki ; Omata, TakahisaJournal of applied physics, 2016-03, Vol.119 (9) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Structural and Thermal Properties of Ternary Narrow-Gap Oxide Semiconductor; Wurtzite-Derived β‑CuGaO2Nagatani, Hiraku ; Suzuki, Issei ; Kita, Masao ; Tanaka, Masahiko ; Katsuya, Yoshio ; Sakata, Osami ; Miyoshi, Shogo ; Yamaguchi, Shu ; Omata, TakahisaInorganic chemistry, 2015-02, Vol.54 (4), p.1698-1704 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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4 |
Material Type: Artigo
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Wurtzite-derived ternary I-III-O 2 semiconductorsOmata, Takahisa ; Nagatani, Hiraku ; Suzuki, Issei ; Kita, MasaoScience and technology of advanced materials, 2015-04, Vol.16 (2), p.024902 [Periódico revisado por pares]United StatesTexto completo disponível |
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5 |
Material Type: Artigo
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Wurtzite-derived ternary I-III-O2 semiconductorsOmata, Takahisa ; Nagatani, Hiraku ; Suzuki, Issei ; Kita, MasaoScience and technology of advanced materials, 2015-04, Vol.16 (2), p.024902-024902 [Periódico revisado por pares]Abingdon: Taylor & FrancisTexto completo disponível |
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6 |
Material Type: Artigo
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Structure of β-AgGaO2; ternary I–III–VI2 oxide semiconductor with a wurtzite-derived structureNagatani, Hiraku ; Suzuki, Issei ; Kita, Masao ; Tanaka, Masahiko ; Katsuya, Yoshio ; Sakata, Osami ; Omata, TakahisaJournal of solid state chemistry, 2015-02, Vol.222, p.66-70 [Periódico revisado por pares]Elsevier IncTexto completo disponível |
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7 |
Material Type: Artigo
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Wurtzite CuGaO2: A New Direct and Narrow Band Gap Oxide Semiconductor Applicable as a Solar Cell AbsorberOmata, Takahisa ; Nagatani, Hiraku ; Suzuki, Issei ; Kita, Masao ; Yanagi, Hiroshi ; Ohashi, NaokiJournal of the American Chemical Society, 2014-03, Vol.136 (9), p.3378-3381 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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8 |
Material Type: Artigo
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High temperature phases with wurtzite-derived structure in Zn2LiGaO4–ZnO alloy systemKita, Masao ; Fukada, Tomoaki ; Yamaguchi, Shu ; Omata, TakahisaJournal of alloys and compounds, 2016-12, Vol.688, p.69-76 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Wurtzite-Derived Quaternary Oxide Semiconductor Cu2ZnGeO4: Its Structural Characteristics, Optical Properties, and Electronic StructureKita, Masao ; Suzuki, Issei ; Ohashi, Naoki ; Omata, TakahisaInorganic chemistry, 2017-11, Vol.56 (22), p.14277-14283 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
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10 |
Material Type: Artigo
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Variation of crystal structure and optical properties of wurtzite-type oxide semiconductor alloys of β-Cu(Ga,Al)O2Nagatani, Hiraku ; Mizuno, Yuki ; Suzuki, Issei ; Kita, Masao ; Ohashi, Naoki ; Omata, TakahisaJournal of applied physics, 2017-06, Vol.121 (23) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |