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Refinado por: autor: Cong, Guangwei remover
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InN nanoflowers grown by metal organic chemical vapor deposition
InN nanoflowers grown by metal organic chemical vapor deposition
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InN nanoflowers grown by metal organic chemical vapor deposition

Kang, Ting-Ting ; Liu, Xianglin ; Zhang, Ri Q ; Hu, Wei G ; Cong, Guangwei ; Zhao, Feng-Ai ; Zhu, Qinsheng

Applied physics letters, 2006-08, Vol.89 (7), p.071113-071113-3 [Periódico revisado por pares]

American Institute of Physics

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2
Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition
Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition
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Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition

Zhang, Panfeng ; Wei, Hongyuan ; Cong, Guangwei ; Hu, Weiguo ; Fan, Haibo ; Wu, JieJun ; Zhu, Qinsheng ; Liu, Xianglin

Thin solid films, 2008-01, Vol.516 (6), p.925-928 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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3
Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates
Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates
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Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates

Wu, Jiejun ; Li, Jiemin ; Cong, Guangwei ; Wei, Hongyuan ; Zhang, Panfeng ; Hu, Weiguo ; Liu, Xianglin ; Zhu, Qinsheng ; Wang, Zhanguo ; Jia, Quanjie ; Guo, Liping

Nanotechnology, 2006-03, Vol.17 (5), p.1251-1254 [Periódico revisado por pares]

IOP Publishing

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4
Crack control in GaN grown on silicon (1 1 1) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
Crack control in GaN grown on silicon (1 1 1) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
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Crack control in GaN grown on silicon (1 1 1) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

Wu, Jiejun ; Han, Xiuxun ; Li, Jiemin ; Wei, Hongyuan ; Cong, Guangwei ; Liu, Xianglin ; Zhu, Qinsheng ; Wang, Zhanguo ; Jia, Quanjie ; Guo, Liping ; Hu, Tiandou ; Wang, Huanhua

Optical materials, 2006-07, Vol.28 (10), p.1227-1231 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
Crack-free GaN/Si(1 1 1) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition
Crack-free GaN/Si(1 1 1) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition
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Crack-free GaN/Si(1 1 1) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition

Wu, Jiejun ; Han, Xiuxun ; Li, Jiemin ; Li, Dabing ; Lu, Yuan ; Wei, Hongyuan ; Cong, Guangwei ; Liu, Xianglin ; Zhu, Qinsheng ; Wang, Zhanguo

Journal of crystal growth, 2005-06, Vol.279 (3), p.335-340 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure
Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure
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Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure

Han, Xiuxun ; Li, Jiemin ; Wu, Jiejun ; Cong, Guangwei ; Liu, Xianglin ; Zhu, Qinsheng ; Wang, Zhanguo

Physica. E, Low-dimensional systems & nanostructures, 2005-08, Vol.28 (3), p.230-236 [Periódico revisado por pares]

Amsterdam: Elsevier

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7
Intersubband optical absorption in quantum dots-in-a-well heterostructures
Intersubband optical absorption in quantum dots-in-a-well heterostructures
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Intersubband optical absorption in quantum dots-in-a-well heterostructures

Han, Xiuxun ; Li, Jiemin ; Wu, Jiejun ; Cong, Guangwei ; Liu, Xianglin ; Zhu, Qinsheng ; Wang, Zhanguo

Journal of applied physics, 2005-09, Vol.98 (5), p.053703-053703-5 [Periódico revisado por pares]

American Institute of Physics

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8
Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer
Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer
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Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

Lu, Yuan ; Cong, Guangwei ; Liu, Xianglin ; Lu, Da-Cheng ; Zhu, Qinsheng ; Wang, Xiaohui ; Wu, Jiejun ; Wang, Zhanguo

Journal of applied physics, 2004-11, Vol.96 (9), p.4982-4988 [Periódico revisado por pares]

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9
Theoretical analysis of gate voltage-controlled subband states in an Al x Ga 1− x N/GaN heterostructure
Theoretical analysis of gate voltage-controlled subband states in an Al x Ga 1− x N/GaN heterostructure
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Theoretical analysis of gate voltage-controlled subband states in an Al x Ga 1− x N/GaN heterostructure

Han, Xiuxun ; Li, Jiemin ; Wu, Jiejun ; Cong, Guangwei ; Liu, Xianglin ; Zhu, Qinsheng ; Wang, Zhanguo

Physica. E, Low-dimensional systems & nanostructures, 2005, Vol.28 (3), p.230-236 [Periódico revisado por pares]

Elsevier B.V

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