Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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A comparative surface science study of carbide and oxycarbide: the effect of oxygen modification on the surface reactivity of C/W(1 1 1)Liu, N ; Rykov, S.A ; Chen, J.GSurface science, 2001-07, Vol.487 (1), p.107-117 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Modifying Surface Reactivity by Carbide Formation: Reaction Pathways of Cyclohexene over Clean and Carbide-Modified W(111)Liu, N ; Rykov, S. A ; Hwu, H. H ; Buelow, M. T ; Chen, J. GThe journal of physical chemistry. B, 2001-05, Vol.105 (18), p.3894-3902 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
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3 |
Material Type: Artigo
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Self-Assembled Impurity Superlattices and Microcavities in SiliconBagraev, Nikolai T. ; Bouravleuv, A.D. ; Gehlhoff, W. ; Klyachkin, L.E. ; Malyarenko, A.M. ; Rykov, S.A.Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2001-04, Vol.194-199, p.673-678 [Periódico revisado por pares]Sem texto completo |
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4 |
Material Type: Artigo
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Transport characteristics and other physicochemical properties of aged poly(1-(trimethylsilyl)-1-;propyne)Yampol'Skii, Yu. P. ; Shishatskii, S. M. ; Shantorovich, V. P. ; Antipov, E. M. ; Kuzmin, N. N. ; Rykov, S. V. ; Khodjaeva, V. L. ; Platé, N. A.Journal of applied polymer science, 1993-06, Vol.48 (11), p.1935-1944 [Periódico revisado por pares]New York: Wiley Subscription Services, Inc., A Wiley CompanySem texto completo |
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5 |
Material Type: Artigo
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Quantum-Well Boron and Phosphorus Diffusion Profiles in SiliconBagraev, Nikolai T. ; Gehlhoff, W. ; Klyachkin, L.E. ; Näser, A. ; Rykov, S.A.Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 1997-01, Vol.143-147, p.1003-1008 [Periódico revisado por pares]Sem texto completo |
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6 |
Material Type: Artigo
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Tunneling and microcontacts on PbTe dots created by STMDavydov, D.N. ; Lyanda-Geller, Yu.B. ; Rykov, S.A. ; Jansen, A.G.M. ; Deltour, R. ; Wyder, P.Physica. B, Condensed matter, 1996-02, Vol.218 (1), p.276-279 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Study of PbTe photodiodes on a buffer sublayer of porous siliconBelyakov, L. V. ; Zakharova, I. B. ; Zubkova, T. I. ; Musikhin, S. F. ; Rykov, S. A.Semiconductors (Woodbury, N.Y.), 1997-01, Vol.31 (1), p.76-77 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Artigo
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Charge carrier interference in one-dimensional semiconductor ringsBagraev, N. T. ; Buravlev, A. D. ; Ivanov, V. K. ; Klyachkin, L. E. ; Malyarenko, A. M. ; Rykov, S. A. ; Shelykh, I. A.Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (7), p.817-824 [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Livro
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Poiskova︠i︡a optimiza︠t︡si︠i︡a: metody deformiruemykh konfigura︠t︡siĭRykov, A. SMoskva: Fizmatlit 1993Sem texto completo |
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10 |
Material Type: Artigo
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Self-ordered microcavities embedded in ultrashallow silicon p-n junctionsBagraev, N. T. ; Buravlev, A. D. ; Klyachkin, L. E. ; Malyarenko, A. M. ; Rykov, S. A.Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (6), p.700-711 [Periódico revisado por pares]Texto completo disponível |