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Refinado por: Nome da Publicação: Nuclear Instruments & Methods In Physics Research. Section B, Beam Interactions With Materials And Atoms remover assunto: Physics remover
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1
Charge equilibration process for channeled He ions along the Si〈100〉 direction
Charge equilibration process for channeled He ions along the Si〈100〉 direction
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Charge equilibration process for channeled He ions along the Si〈100〉 direction

Azevedo, G.de M ; Kaschny, J.R.A ; Dias, J.F ; Grande, P.L ; Behar, M ; Klatt, Ch ; Kalbitzer, S

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999-01, Vol.148 (1-4), p.168-171 [Periódico revisado por pares]

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2
Depth profiles and amorphization behavior under channeling conditions for low energy Bi ions implanted into Si crystals
Depth profiles and amorphization behavior under channeling conditions for low energy Bi ions implanted into Si crystals
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Depth profiles and amorphization behavior under channeling conditions for low energy Bi ions implanted into Si crystals

de M. Azevedo, G ; Martini, J.C ; Behar, M ; Grande, P.L

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1999-02, Vol.149 (3), p.301-311 [Periódico revisado por pares]

Elsevier B.V

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3
He-induced cavity formation in silicon upon high-temperature implantation
He-induced cavity formation in silicon upon high-temperature implantation
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He-induced cavity formation in silicon upon high-temperature implantation

Fichtner, P.F.P ; Peeva, A ; Behar, M ; M. Azevedo, G.de ; Maltez, R.L ; Koegler, R ; Skorupa, W

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2000-03, Vol.161, p.1038-1042 [Periódico revisado por pares]

Elsevier B.V

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4
Angular dependence of the electronic stopping power of Li ions channeled around the Si 〈1 0 0〉 direction
Angular dependence of the electronic stopping power of Li ions channeled around the Si 〈1 0 0〉 direction
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Angular dependence of the electronic stopping power of Li ions channeled around the Si 〈1 0 0〉 direction

de M. Azevedo, G. ; Dias, J.F. ; dos Santos, J.H.R. ; Grande, P.L. ; Behar, M. ; Klatt, Chr ; Kalbitzer, S.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2000-03, Vol.161, p.145-149 [Periódico revisado por pares]

Elsevier B.V

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5
Molecular H 2 and H 3 energy loss measurements along the Si 〈111〉 direction
Molecular H 2 and H 3 energy loss measurements along the Si 〈111〉 direction
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Molecular H 2 and H 3 energy loss measurements along the Si 〈111〉 direction

Behar, M ; Grande, P.L ; Azevedo, G.de M ; Alves, E ; Silva, M.F.da ; Soares, J.C

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2000-03, Vol.161, p.168-171 [Periódico revisado por pares]

Elsevier B.V

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6
Impact-parameter dependent energy loss of screened ions
Impact-parameter dependent energy loss of screened ions
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Impact-parameter dependent energy loss of screened ions

Azevedo, G.de M. ; Grande, P.L. ; Schiwietz, G.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2000-04, Vol.164-165, p.203-211 [Periódico revisado por pares]

Elsevier B.V

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7
Random energy loss and straggling study of Li into Si
Random energy loss and straggling study of Li into Si
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Random energy loss and straggling study of Li into Si

da Silva, D.L. ; Azevedo, G.de M. ; Behar, M. ; Dias, J.F. ; Grande, P.L.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-04, Vol.175, p.98-101 [Periódico revisado por pares]

Elsevier B.V

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8
In situ measurements of the channeling dependence of ion-beam-induced recrystallization in silicon
In situ measurements of the channeling dependence of ion-beam-induced recrystallization in silicon
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In situ measurements of the channeling dependence of ion-beam-induced recrystallization in silicon

Azevedo, G.de M. ; Williams, J.S. ; Young, I.M. ; Conway, M.J. ; Kinomura, A.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-05, Vol.190 (1), p.772-776 [Periódico revisado por pares]

Elsevier B.V

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9
Structural characterization of amorphised InAs with synchrotron radiation
Structural characterization of amorphised InAs with synchrotron radiation
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Structural characterization of amorphised InAs with synchrotron radiation

Azevedo, G.de M. ; Ridgway, M.C. ; Yu, K.M. ; Glover, C.J. ; Foran, G.J.

15th International Conference on Ion-Beam Analysis (IBA-15),Cairns, Australia,2001-07-15 - 2001-07-20, 2002-05, Vol.190 (1), p.851-855 [Periódico revisado por pares]

Elsevier B.V

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10
Common structure in amorphised compound semiconductors
Common structure in amorphised compound semiconductors
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Common structure in amorphised compound semiconductors

Ridgway, M.C. ; Azevedo, G.de M. ; Glover, C.J. ; Yu, K.M. ; Foran, G.J.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003, Vol.199, p.235-239 [Periódico revisado por pares]

United States: Elsevier B.V

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