Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVDBai, J. ; Wang, T. ; Li, H.D. ; Jiang, N. ; Sakai, S.Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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{0 0 1}-Facet-Exposed Ag 4 V 2 O 7 Nanoplates: Additive-Free Hydrothermal Synthesis and Enhanced Photocatalytic ActivityVan, Nguyen Duc ; Le, Ngo Thi HongJournal of nanomaterials, 2018-10, Vol.2018, p.1-7 [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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0 + 0 = 2: Changeover of Stability and Photopolymerization Kinetics for the Rotator Phase of Long-Chain Acrylate through the Ultra-Addition Effect in Binary SystemsYao, Miao ; Nie, Jun ; He, YongMacromolecules, 2018-08, Vol.51 (15), p.5904-5910 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
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4 |
Material Type: Artigo
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(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel methodGuo, Dongyun ; Ju, Yang ; Fu, Chengju ; Huang, Zhixiong ; Zhang, LianmengMaterials science--Poland, 2016-09, Vol.34 (3), p.555-563 [Periódico revisado por pares]De GruyterTexto completo disponível |
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5 |
Material Type: Artigo
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(0 0 6)-oriented α-Al 2O 3 films prepared in CO 2–H 2 atmosphere by laser chemical vapor deposition using a diode laserYou, Yu ; Ito, Akihiko ; Tu, Rong ; Goto, TakashiMaterials science & engineering. B, Solid-state materials for advanced technology, 2011, Vol.176 (13), p.984-989 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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(0 0 l)-oriented Bi 2Sr 2Co 2O y and Ca 3Co 4O 9 films: Self-assembly orientation and growth mechanism by chemical solution depositionZhu, Xuebin ; Shi, Dongqi ; Dou, Shixue ; Sun, Yuping ; Li, Qi ; Wang, Lin ; Li, Wenxian ; Yeoh, Weikong ; Zheng, Rongkun ; Chen, Zhixin ; Kong, ChunxiuActa materialia, 2010, Vol.58 (12), p.4281-4291 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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7 |
Material Type: Artigo
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0.00035 mm2 on-chip leakage sensing unit for various devices in 10 nm FinFET processOh, G.-G ; Lee, Y.-W ; Lee, BElectronics letters, 2018-02, Vol.54 (4), p.213-215 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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8 |
Material Type: Artigo
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0.00035 mm 2 on‐chip leakage sensing unit for various devices in 10 nm FinFET processOh, G.‐G. ; Lee, Y.‐W. ; Lee, B.Electronics letters, 2018-02, Vol.54 (4), p.213-215 [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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[0001] Compression response at room temperature of single-crystal magnesiumSyed, B. ; Geng, J. ; Mishra, R.K. ; Kumar, K.S.Scripta materialia, 2012-10, Vol.67 (7-8), p.700-703 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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10 |
Material Type: Artigo
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(0?0?1) Co^sub 2^Z filled random Co^sub 2^Z powder: A lightweight and broadband with enhanced electromagnetic wave absorption propertiesYang, Haibo ; Dai, Jingjing ; Liu, Xiao ; Lin, Ying ; Wang, FenMaterials letters, 2018-02, Vol.212, p.275 [Periódico revisado por pares]Amsterdam: Elsevier BVTexto completo disponível |