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Refinado por: Base de dados/Biblioteca: AIP - American Institute of Physics remover Base de dados/Biblioteca: Science Citation Index Expanded (Web of Science) remover
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Radiation degradation prediction for InGaP solar cells by using appropriate estimation method for displacement threshold energy
Radiation degradation prediction for InGaP solar cells by using appropriate estimation method for displacement threshold energy
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Radiation degradation prediction for InGaP solar cells by using appropriate estimation method for displacement threshold energy

Okuno, Y. ; Okuda, S. ; Akiyoshi, M. ; Oka, T. ; Harumoto, M. ; Omura, K. ; Kawakita, S. ; Imaizumi, M. ; Messenger, S. R. ; Lee, K. H. ; Yamaguchi, M.

Journal of applied physics, 2017-09, Vol.122 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Ab-initio simulations of higher Miller index Si:SiO2 interfaces for fin field effect transistor and nanowire transistors
Ab-initio simulations of higher Miller index Si:SiO2 interfaces for fin field effect transistor and nanowire transistors
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Ab-initio simulations of higher Miller index Si:SiO2 interfaces for fin field effect transistor and nanowire transistors

Li, Hongfei ; Guo, Yuzheng ; Robertson, John ; Okuno, Y.

Journal of applied physics, 2016-02, Vol.119 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Thermally stable high effective work function TaCN thin films for metal gate electrode applications
Thermally stable high effective work function TaCN thin films for metal gate electrode applications
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Thermally stable high effective work function TaCN thin films for metal gate electrode applications

Adelmann, C ; Meersschaut, J ; Ragnarsson, L.-Å ; Conard, T ; Franquet, A ; Sengoku, N ; Okuno, Y ; Favia, P ; Bender, H ; Zhao, C ; O'Sullivan, B J ; Rothschild, A ; Schram, T ; Kittl, J A ; Van Elshocht, S ; De Gendt, S ; Lehnen, P ; Boissière, O ; Lohe, C

Journal of applied physics, 2009-03, Vol.105 (5), p.053516-053516-8 [Periódico revisado por pares]

American Institute of Physics

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4
Radio-frequency power-assisted performance improvement of a magnetohydrodynamic power generator
Radio-frequency power-assisted performance improvement of a magnetohydrodynamic power generator
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Radio-frequency power-assisted performance improvement of a magnetohydrodynamic power generator

Murakami, Tomoyuki ; Okuno, Yoshihiro ; Yamasaki, Hiroyuki

Journal of applied physics, 2005-12, Vol.98 (11) [Periódico revisado por pares]

United States

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5
Performance of rf-assisted magnetohydrodynamics power generator
Performance of rf-assisted magnetohydrodynamics power generator
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Performance of rf-assisted magnetohydrodynamics power generator

Murakami, Tomoyuki ; Okuno, Yoshihiro ; Yamasaki, Hiroyuki

Physics of plasmas, 2005-11, Vol.12 (11), p.113503-113503-8 [Periódico revisado por pares]

United States: American Institute of Physics

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6
Suppression of ionization instability in a magnetohydrodynamic plasma by coupling with a radio-frequency electromagnetic field
Suppression of ionization instability in a magnetohydrodynamic plasma by coupling with a radio-frequency electromagnetic field
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Suppression of ionization instability in a magnetohydrodynamic plasma by coupling with a radio-frequency electromagnetic field

Murakami, Tomoyuki ; Okuno, Yoshihiro ; Yamasaki, Hiroyuki

Applied physics letters, 2005-05, Vol.86 (19) [Periódico revisado por pares]

United States

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7
Rf-assisted magnetohydrodynamic power generation in a pure-argon plasma
Rf-assisted magnetohydrodynamic power generation in a pure-argon plasma
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Rf-assisted magnetohydrodynamic power generation in a pure-argon plasma

Murakami, Tomoyuki ; Okuno, Yoshihiro ; Yamasaki, Hiroyuki

Applied physics letters, 2005-04, Vol.86 (17) [Periódico revisado por pares]

United States

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8
Plasma structure and behavior in a disk magnetohydrodynamic generator
Plasma structure and behavior in a disk magnetohydrodynamic generator
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Plasma structure and behavior in a disk magnetohydrodynamic generator

Murakami, Tomoyuki ; Okuno, Yoshihiro ; Yamasaki, Hiroyuki

Journal of applied physics, 2004-11, Vol.96 (10), p.5441-5449 [Periódico revisado por pares]

United States

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9
High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication
High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication
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High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication

Okuno, Yae L. ; DenBaars, Steven P. ; Bowers, John E.

Applied physics letters, 2004-05, Vol.84 (18), p.3483-3485 [Periódico revisado por pares]

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10
Influence of cross-linking density on volume phase transition of liquid crystalline gels in a nematogenic solvent
Influence of cross-linking density on volume phase transition of liquid crystalline gels in a nematogenic solvent
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Influence of cross-linking density on volume phase transition of liquid crystalline gels in a nematogenic solvent

Okuno, Yuko ; Urayama, Kenji ; Kohjiya, Shinzo

The Journal of chemical physics, 2003-06, Vol.118 (21), p.9854-9860 [Periódico revisado por pares]

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