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Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs
Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs
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Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs

Meier, Johanna ; Bacher, Gerd

Materials, 2022-02, Vol.15 (5), p.1626 [Periódico revisado por pares]

Switzerland: MDPI AG

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2
GaN obtained on quartz substrates through the nitridation of GaAs films deposited via CSVT
GaN obtained on quartz substrates through the nitridation of GaAs films deposited via CSVT
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GaN obtained on quartz substrates through the nitridation of GaAs films deposited via CSVT

García-Salgado, G. ; Cruz-Bueno, J.J. ; Ramírez-González, F.S. ; Gastellou, E. ; Nieto-Caballero, F.G. ; Rosendo-Andrés, E. ; Luna-López, J.A. ; Coyopol-Solís, A. ; Romano-Trujillo, R. ; Morales-Ruiz, C. ; Galeazzi-Isasmendi, R. ; López-Gayou, V. ; Severiano, F.

Journal of alloys and compounds, 2021-12, Vol.887, p.161469, Article 161469 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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3
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
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Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Schilirò, Emanuela ; Giannazzo, Filippo ; Di Franco, Salvatore ; Greco, Giuseppe ; Fiorenza, Patrick ; Roccaforte, Fabrizio ; Prystawko, Paweł ; Kruszewski, Piotr ; Leszczynski, Mike ; Cora, Ildiko ; Pécz, Béla ; Fogarassy, Zsolt ; Lo Nigro, Raffaella

Nanomaterials (Basel, Switzerland), 2021-12, Vol.11 (12), p.3316 [Periódico revisado por pares]

Switzerland: MDPI AG

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4
The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices
The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices
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The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices

Davydov, Valery ; Roginskii, Evgenii M. ; Kitaev, Yuri ; Smirnov, Alexander ; Eliseyev, Ilya ; Zavarin, Eugene ; Lundin, Wsevolod ; Nechaev, Dmitrii ; Jmerik, Valentin ; Smirnov, Mikhail ; Pristovsek, Markus ; Shubina, Tatiana

Nanomaterials (Basel, Switzerland), 2021-09, Vol.11 (9), p.2396 [Periódico revisado por pares]

Basel: MDPI AG

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5
Spontaneous Polarization Calculations in Wurtzite II-Oxides, III-Nitrides, and SiC Polytypes through Net Dipole Moments and the Effects of Nanoscale Layering
Spontaneous Polarization Calculations in Wurtzite II-Oxides, III-Nitrides, and SiC Polytypes through Net Dipole Moments and the Effects of Nanoscale Layering
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Spontaneous Polarization Calculations in Wurtzite II-Oxides, III-Nitrides, and SiC Polytypes through Net Dipole Moments and the Effects of Nanoscale Layering

Troy, William ; Dutta, Mitra ; Stroscio, Michael

Nanomaterials (Basel, Switzerland), 2021-07, Vol.11 (8), p.1956 [Periódico revisado por pares]

Basel: MDPI AG

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6
High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
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High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Dan, Minjiang ; Hu, Gongwei ; Nie, Jiaheng ; Li, Lijie ; Zhang, Yan

Small (Weinheim an der Bergstrasse, Germany), 2021-04, Vol.17 (13), p.e2008106-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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7
The Features of Phase Stability of GaN and AlN Films at Nanolevel
The Features of Phase Stability of GaN and AlN Films at Nanolevel
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The Features of Phase Stability of GaN and AlN Films at Nanolevel

Chepkasov, Ilya V ; Erohin, Sergey V ; Sorokin, Pavel B

Nanomaterials (Basel, Switzerland), 2020-12, Vol.11 (1), p.8 [Periódico revisado por pares]

Switzerland: MDPI

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8
Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy
Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy
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Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy

Tyagi, Prashant ; Ramesh, Ch ; Kushvaha, S. S. ; Gupta, Govind ; Senthil Kumar, M.

Journal of nanoscience and nanotechnology, 2020-06, Vol.20 (6), p.3919-3924

26650 The Old Road, Suite 208, Valencia, California 91381, USA: American Scientific Publishers

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9
Structural and Optical Properties of GaN Film on Copper and Graphene/Copper Metal Foils Grown by Laser Molecular Beam Epitaxy
Structural and Optical Properties of GaN Film on Copper and Graphene/Copper Metal Foils Grown by Laser Molecular Beam Epitaxy
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Structural and Optical Properties of GaN Film on Copper and Graphene/Copper Metal Foils Grown by Laser Molecular Beam Epitaxy

Ramesh, C. ; Tyagi, P. ; Bera, S. ; Gautam, S. ; Subhedar, Kiran M. ; Senthil Kumar, M. ; Kushvaha, Sunil S.

Journal of nanoscience and nanotechnology, 2020-06, Vol.20 (6), p.3929-3934

26650 The Old Road, Suite 208, Valencia, California 91381, USA: American Scientific Publishers

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10
Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting
Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting
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Direct growth of self-aligned single-crystalline GaN nanorod array on flexible Ta foil for photocatalytic solar water-splitting

Tyagi, Prashant ; Ramesh, Ch ; Kaswan, Jyoti ; Dhua, Swati ; John, Subish ; Shukla, Ajay Kumar ; Roy, Somnath C. ; Kushvaha, Sunil Singh ; Muthusamy, Senthil Kumar

Journal of alloys and compounds, 2019-10, Vol.805, p.97-103 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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