Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0-3 and 1-3 piezocomposites based on single crystal PMN-PT for transducer applicationsLevassort, F ; Hladky-Hennion, A C ; Le Khanh, H ; Tran-Huu-Hue, P ; Lethiecq, M ; Pham Thi, MAdvances in applied ceramics, 2010-03, Vol.109 (3), p.162-168 [Periódico revisado por pares]London, England: Taylor & FrancisTexto completo disponível |
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2 |
Material Type: Artigo
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0-π phase-controllable thermal Josephson junctionFornieri, Antonio ; Timossi, Giuliano ; Virtanen, Pauli ; Solinas, Paolo ; Giazotto, FrancescoNature nanotechnology, 2017-05, Vol.12 (5), p.425-429 [Periódico revisado por pares]EnglandTexto completo disponível |
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3 |
Material Type: Artigo
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{001}/{101} facets co-exposed TiO2 microsheet arrays with Lanthanum doping for enhancing photocatalytic CO2 reductionLiu, Xin ; Yang, Ji ; Hu, Lanqing ; Shen, Qianqian ; Li, Qi ; Liu, Xuguang ; Jia, Husheng ; Xue, JinboJournal of materials science. Materials in electronics, 2020-11, Vol.31 (21), p.19464-19474 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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4 |
Material Type: Artigo
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(001) and (11n)n = 1,3 GaAs substrate orientations for growth of GaN layers by AP-MOVPE: impact of GaN buffer layer thicknessLaifi, J. ; Bchetnia, A.Journal of materials science. Materials in electronics, 2022-04, Vol.33 (10), p.7587-7597 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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5 |
Material Type: Artigo
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[011] waveguide stripe direction n-i-p-n heterostructure InP optical modulatorOgiso, Y ; Ohiso, Y ; Shibata, Y ; Kohtoku, MElectronics letters, 2014-04, Vol.50 (9), p.688-690 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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6 |
Material Type: Artigo
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0.16nm spaced multi-wavelength Brillouin fiber laser in a figure-of-eight configurationParvizi, R. ; Arof, H. ; Ali, N.M. ; Ahmad, H. ; Harun, S.W.Optics and laser technology, 2011-06, Vol.43 (4), p.866-869 [Periódico revisado por pares]Texto completo disponível |
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7 |
Material Type: Artigo
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0.18-μm Nondestructive readout FeRAM using charge compensation techniqueKATO, Yoshihisa ; YAMADA, Takayoshi ; SHIMADA, YasuhiroIEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2616-2621 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
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8 |
Material Type: Artigo
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0.3–3 GHz magneto-dielectric properties of nanostructured NiZnCo ferrite from hydrothermal processShen, Xiang ; Wang, Yanxin ; Yang, Xiang ; Lu, Liqiang ; Huang, LiangJournal of materials science. Materials in electronics, 2010-06, Vol.21 (6), p.630-634 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
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9 |
Material Type: Artigo
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0.4 and 0.7 conductance anomalies in quantum point contactsBychkov, A M ; Stace, T MNanotechnology, 2007-05, Vol.18 (18), p.185403-185403 (5) [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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10 |
Material Type: Artigo
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0.4- mu m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuitJeon, Byung-Gil ; Choi, Mun-Kyu ; Song, Yoonjong ; Oh, Seung-Kyu ; Chung, Yeonbae ; Suh, Kang-Deog ; Kim, KinamIEEE journal of solid-state circuits, 2000-11, Vol.35 (11), p.1690-1694 [Periódico revisado por pares]Texto completo disponível |