Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Epitaxial growth of ZrN on Si(100)BARNETT, S. A ; HULTMAN, L ; SUNDGREN, J.-E ; RONIN, F ; ROHDE, SAppl. Phys. Lett.; (United States), 1988-08, Vol.53 (5), p.400-402 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Formation of basal plane fiber-textured Ti2AlN films on amorphous substratesBeckers, M. ; Eriksson, F. ; Lauridsen, J. ; Baehtz, C. ; Jensen, J. ; Hultman, L.Physica status solidi. PSS-RRL. Rapid research letters, 2010-06, Vol.4 (5-6), p.121-123 [Periódico revisado por pares]Berlin: WILEY-VCH VerlagTexto completo disponível |
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3 |
Material Type: Artigo
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The influence of substrate temperature and Al mobility on the microstructural evolution of magnetron sputtered ternary Ti-Al-N thin filmsBeckers, M ; Höglund, C ; Baehtz, C ; Martins, R M. S ; Persson, P O. Å ; Hultman, L ; Möller, WJournal of applied physics, 2009-09, Vol.106 (6), p.064915-064915-7 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Synchrotron x-ray diffraction and transmission electron microscopy studies of interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayersChun, J.-S. ; Carlsson, J. R. A. ; Desjardins, P. ; Bergstrom, D. B. ; Petrov, I. ; Greene, J. E. ; Lavoie, C. ; Cabral, C. ; Hultman, L.J. Vac. Sci. Technol. A, 2001-01, Vol.19 (1), p.182-191 [Periódico revisado por pares]United StatesTexto completo disponível |
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5 |
Material Type: Artigo
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Microstructure and electrical properties of Ti–Si–C–Ag nanocomposite thin filmsEklund, P. ; Joelsson, T. ; Ljungcrantz, H. ; Wilhelmsson, O. ; Czigány, Zs ; Högberg, H. ; Hultman, L.Surface & coatings technology, 2007, Vol.201 (14), p.6465-6469 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substratesEKLUND, P ; MURUGAIAH, A ; EMMERLICH, J ; CZIGANY, Zs ; FRODELIUS, J ; BARSOUM, M. W ; HÖGBERG, H ; HULTMAN, LJournal of crystal growth, 2007-06, Vol.304 (1), p.264-269 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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7 |
Material Type: Artigo
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Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlCFRODELIUS, J ; EKLUND, P ; BECKERS, M ; PERSSON, P. O. A ; HÖGBERG, H ; HULTMAN, LThin solid films, 2010, Vol.518 (6), p.1621-1626 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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8 |
Material Type: Artigo
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Ti2AlC coatings deposited by High Velocity Oxy-Fuel sprayingFRODELIUS, Jenny ; SONESTEDT, Marie ; BJÖRKLUND, Stefan ; PALMQUIST, Jens-Petter ; STILLER, Krystyna ; HÖGBERG, Hans ; HULTMAN, LarsSurface & coatings technology, 2008-08, Vol.202 (24), p.5976-5981 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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9 |
Material Type: Artigo
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Carbide and nanocomposite thin films in the Ti–Pt–C systemLewin, Erik ; Buchholt, Kristina ; Lu, Jun ; Hultman, Lars ; Spetz, Anita Lloyd ; Jansson, UlfThin solid films, 2010-07, Vol.518 (18), p.5104-5109 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Nanoindentation studies of single-crystal (001)-, (011)-, and (111)-oriented TiN layers on MgOLjungcrantz, H. ; Odén, M. ; Hultman, L. ; Greene, J. E. ; Sundgren, J.-E.Journal of Applied Physics, 1996-12, Vol.80 (12), p.6725-6733 [Periódico revisado por pares]United StatesTexto completo disponível |