Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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0.13 μm pattern delineation using KrF excimer laser lightIMAI, A ; ASAI, N ; UENO, T ; HASEGAWA, N ; TANAKA, T ; TERASAWA, T ; OKAZAKI, SJapanese Journal of Applied Physics, 1994-12, Vol.33 (12B), p.6816-6822 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |
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2 |
Material Type: Artigo
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0.15- mu m T-shaped gate MODFETs using BCB as low-k spacerAnda, Y ; Kawashima, K ; Nishitsuji, M ; Tanaka, TIEICE transactions on electronics, 2001-10, Vol.E84-C (10), p.1323-1327 [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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0.2 mass%炭素鋼における低温焼戻し脆性と脆性−延性遷移挙動田中, 將己 ; 安井, 隼人 ; 東田, 賢二鉄と鋼, 2016, Vol.102(6), pp.340-346 [Periódico revisado por pares]一般社団法人 日本鉄鋼協会Texto completo disponível |
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4 |
Material Type: Ata de Congresso
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0.2 mu m gate pseudomorphic inverted HEMT for high speed digital ICsTsuji, H. ; Fujishiro, H.I. ; Shikata, M. ; Tanaka, K. ; Nishi, S.[1991] GaAs IC Symposium Technical Digest, 1991, p.113-116IEEETexto completo disponível |
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5 |
Material Type: Artigo
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0.35-µm laser-matter interaction experiments at the University of RochesterSeka, W. ; Goldman, L. ; Richardson, M. ; Soures, J. ; Yaakobi, B. ; Boehly, T. ; Keck, R. ; Tanaka, K. ; Forsley, K. ; Boni, R. ; Craxton, R. ; Delettrez, J. ; McCrory, R.IEEE journal of quantum electronics, 1981-12, Vol.17 (12), p.2412-2412 [Periódico revisado por pares]IEEETexto completo disponível |
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6 |
Material Type: Artigo
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0.35-mum laser-matter interaction experiments at the University of RochesterGoldman, L ; Richardson, M ; Soures, J ; Yaakobi, B ; Boehly, T ; Keck, R ; Tanaka, K ; Forsley, K ; Boni, R ; Craxton, R ; Delettrez, J ; McCrory, RIEEE journal of quantum electronics, 1981-12, Vol.17 (12), p.2412-2412 [Periódico revisado por pares]Texto completo disponível |
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7 |
Material Type: Ata de Congresso
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A 0.026mm2 capacitance-to-digital converter for biotelemetry applications using a charge redistribution techniqueTanaka, K. ; Kuramochi, Y. ; Kurashina, T. ; Okada, K. ; Matsuzawa, A.2007 IEEE Asian Solid-State Circuits Conference, 2007, p.244-247IEEETexto completo disponível |
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8 |
Material Type: Ata de Congresso
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A 0.1 /spl mu/m CMOS with a step channel profile formed by ultra high vacuum CVD and in-situ doped ionsHori, A. ; Hirai, T. ; Tanaka, M. ; Nakaoka, H. ; Umimoto, H. ; Yasuhira, M.Proceedings of IEEE International Electron Devices Meeting, 1993, p.909-911IEEETexto completo disponível |
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9 |
Material Type: Ata de Congresso
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A 0.15 /spl mu/m KrF lithography for 1 Gb DRAM product using highly printable patterns and thin resist processOzaki, T. ; Azuma, T. ; Itoh, M. ; Kawamura, D. ; Tanaka, S. ; Ishibashi, Y. ; Shiratake, S. ; Kyoh, S. ; Kondoh, T. ; Inoue, S. ; Tsuchida, K. ; Kohyama, Y. ; Onishi, Y.1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216), 1998, p.84-85IEEETexto completo disponível |
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10 |
Material Type: Ata de Congresso
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A 0.18-μm CMOS Low-spurious Local Signal Generator for MB-OFDM UWB RadioTokairin, T. ; Matsuno, N. ; Numata, K. ; Maeda, T. ; Tanaka, S.2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007, p.215-218IEEETexto completo disponível |