Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Ata de Congresso
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A Low Level Current Mode Gate and its Associated Novel Current Source for a High Speed, 16 Bit, Single Chip Microprocessor using C D IColaco, S1975 First European Solid State Circuits Conference (ESSCIRC), 1975, p.121-121IEEETexto completo disponível |
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2 |
Material Type: Ata de Congresso
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The Impact of VLSI on the European Electronics IndustryBrinker, C.S. den ; Mackintosh, I.M.ESSCIRC '77: 3rd European Solid State Circuits Conference, 1977, p.27-27IEEETexto completo disponível |
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3 |
Material Type: Ata de Congresso
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The Impact of Very Large Scale Integration (VLSI) on Systems and PeopleFolberth, O. G.ESSCIRC '77: 3rd European Solid State Circuits Conference, 1977, p.21-26IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Foreword (June 1978)IEEE journal of solid-state circuits, 1978-06, Vol.13 (3), p.283-284 [Periódico revisado por pares]IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Wafer-scale integration-a fault-tolerant procedureAubusson, R.C. ; Catt, I.IEEE journal of solid-state circuits, 1978-06, Vol.13 (3), p.339-344 [Periódico revisado por pares]IEEETexto completo disponível |
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6 |
Material Type: Artigo
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A 64-kbit dynamic MOS RAMArai, E. ; Ieda, N.IEEE journal of solid-state circuits, 1978-06, Vol.13 (3), p.333-338 [Periódico revisado por pares]IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Ultra-High Density VLSI ModulesCiccio, J. ; Thun, R.IEEE transactions on components, hybrids, and manufacturing technology, 1978-09, Vol.1 (3), p.242-248IEEETexto completo disponível |
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8 |
Material Type: Artigo
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MA-4 the prospects for ultra-high speed VLSI GaAs digital logicEden, R.C.IEEE transactions on electron devices, 1978-11, Vol.25 (11), p.1339-1340 [Periódico revisado por pares]IEEETexto completo disponível |
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9 |
Material Type: Artigo
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An Assessment of the Radiation Tolerance of Collector Diffusion Isolation Bipolar TechnologyRichards, R F ; Slater, S R ; Colaco, S FIEEE transactions on nuclear science, 1979-01, Vol.26 (1), p.952-958 [Periódico revisado por pares]IEEETexto completo disponível |
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10 |
Material Type: Artigo
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1 /spl mu/m MOSFET VLSI technology. VII. Metal silicide interconnection technology - A future perspectiveCrowder, B.L. ; Zirinsky, S.IEEE journal of solid-state circuits, 1979-04, Vol.14 (2), p.291-293 [Periódico revisado por pares]IEEETexto completo disponível |