Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Quantum Cascade DetectorsGiorgetta, F.R. ; Baumann, E. ; Graf, M. ; Quankui Yang ; Manz, C. ; Kohler, K. ; Beere, H.E. ; Ritchie, D.A. ; Linfield, E. ; Davies, A.G. ; Fedoryshyn, Y. ; Jackel, H. ; Fischer, M. ; Faist, J. ; Hofstetter, D.IEEE journal of quantum electronics, 2009-08, Vol.45 (8), p.1039-1052 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting DiodesTitkov, Ilya E. ; Karpov, Sergey Yu ; Yadav, Amit ; Zerova, Vera L. ; Zulonas, Modestas ; Galler, Bastian ; Strassburg, Martin ; Pietzonka, Ines ; Lugauer, Hans-Juergen ; Rafailov, Edik U.IEEE journal of quantum electronics, 2014-11, Vol.50 (11), p.911-920 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Endogenous and Exogenous Fluorescence Skin Cancer Diagnostics for Clinical ApplicationsBorisova, Ekaterina G. ; Angelova, Liliya P. ; Pavlova, Elmira P.IEEE journal of selected topics in quantum electronics, 2014-03, Vol.20 (2), p.211-222 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Amorphous Oxide Semiconductor TFTs for Displays and ImagingNathan, Arokia ; Sungsik Lee ; Sanghun Jeon ; Robertson, JohnJournal of display technology, 2014-11, Vol.10 (11), p.917-927New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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InGaAs Quantum-Dot Mode-Locked Laser DiodesThompson, M.G. ; Rae, A.R. ; Mo Xia ; Penty, R.V. ; White, I.H.IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.661-672 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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Frequency Response Enhancement of Optical Injection-Locked LasersLau, E.K. ; Hyuk-Kee Sung ; Wu, M.C.IEEE journal of quantum electronics, 2008-01, Vol.44 (1), p.90-99 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)Huang, Xue ; Song, Yuncheng ; Masuda, Taizo ; Jung, Daehwan ; Lee, MinjooElectronics letters, 2014-08, Vol.50 (17), p.1226-1227 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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8 |
Material Type: Artigo
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Chemical sensors based on quantum cascade lasersKosterev, A.A. ; Tittel, F.K.IEEE journal of quantum electronics, 2002-06, Vol.38 (6), p.582-591 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Nitride-based cascade near white light-emitting diodesChen, C.H. ; Chang, S.J. ; Su, Y.K. ; Sheu, J.K. ; Chen, J.F. ; Kuo, C.H. ; Lin, Y.C.IEEE photonics technology letters, 2002-07, Vol.14 (7), p.908-910New York: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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GaAs-AlGaAs quantum cascade lasers: physics, technology, and prospectsSirtori, C. ; Page, H. ; Becker, C. ; Ortiz, V.IEEE journal of quantum electronics, 2002-06, Vol.38 (6), p.547-558 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |