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Acousto–defect interaction in irradiated and non-irradiated silicon n+–p structures
Acousto–defect interaction in irradiated and non-irradiated silicon n+–p structures
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Acousto–defect interaction in irradiated and non-irradiated silicon n+–p structures

Olikh, O. Ya ; Gorb, A. M. ; Chupryna, R. G. ; Pristay-Fenenkov, O. V.

Journal of applied physics, 2018-04, Vol.123 (16), p.161573 [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Admittance spectroscopy of Cd Te ∕ Cd S solar cells subjected to varied nitric-phosphoric etching conditions
Admittance spectroscopy of Cd Te ∕ Cd S solar cells subjected to varied nitric-phosphoric etching conditions
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Admittance spectroscopy of Cd Te ∕ Cd S solar cells subjected to varied nitric-phosphoric etching conditions

Proskuryakov, Y Y ; Durose, K ; Taele, B M ; Welch, G P ; Oelting, S

Journal of applied physics, 2007-01, Vol.101 (1), p.014505-014505-8 [Periódico revisado por pares]

American Institute of Physics

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3
Ambient aging effects on the effective energy gap of ZnO thin films
Ambient aging effects on the effective energy gap of ZnO thin films
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Ambient aging effects on the effective energy gap of ZnO thin films

Bridoux, G. ; Ruano, G. D. ; Ferreyra, J. M. ; Villafuerte, M.

Journal of applied physics, 2020-06, Vol.127 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Ambipolar charge carrier transport in mixed organic layersof phthalocyanine and fullerene
Ambipolar charge carrier transport in mixed organic layersof phthalocyanine and fullerene
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Ambipolar charge carrier transport in mixed organic layersof phthalocyanine and fullerene

Opitz, Andreas ; Bronner, Markus ; Brütting, Wolfgang

Journal of applied physics, 2007-03, Vol.101 (6), p.063709-063709-9 [Periódico revisado por pares]

American Institute of Physics

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5
An analysis of defects induced by high dose γ-ray irradiation and their influence on the charge transport properties in CdZnTe detectors
An analysis of defects induced by high dose γ-ray irradiation and their influence on the charge transport properties in CdZnTe detectors
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An analysis of defects induced by high dose γ-ray irradiation and their influence on the charge transport properties in CdZnTe detectors

Guo, Rongrong ; Xu, Yadong ; Wang, Tao ; Zha, Gangqiang ; Jie, Wanqi

Journal of applied physics, 2020-01, Vol.127 (2) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Analysis of carrier transport in quaterrylene thin film transistors formed by ultraslow vacuum deposition
Analysis of carrier transport in quaterrylene thin film transistors formed by ultraslow vacuum deposition
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Analysis of carrier transport in quaterrylene thin film transistors formed by ultraslow vacuum deposition

Hayakawa, Ryoma ; Petit, Matthieu ; Chikyow, Toyohiro ; Wakayama, Yutaka

Journal of applied physics, 2008-07, Vol.104 (2), p.024506-024506-5 [Periódico revisado por pares]

American Institute of Physics

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7
Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobilityand conductance
Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobilityand conductance
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Analysis of charge transport in a polycrystalline pentacene thin film transistor by temperature and gate bias dependent mobilityand conductance

Guo, Dong ; Miyadera, Tetsuhiko ; Ikeda, Susumu ; Shimada, Toshihiro ; Saiki, Koichiro

Journal of applied physics, 2007-07, Vol.102 (2), p.023706-023706-8 [Periódico revisado por pares]

American Institute of Physics

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8
Annealing behavior between room temperature and 2000°C of deep level defects in electron-irradiated n -type 4H silicon carbide
Annealing behavior between room temperature and 2000°C of deep level defects in electron-irradiated n -type 4H silicon carbide
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Annealing behavior between room temperature and 2000°C of deep level defects in electron-irradiated n -type 4H silicon carbide

Alfieri, G ; Monakhov, E V ; Svensson, B G ; Linnarsson, M K

Journal of applied physics, 2005-08, Vol.98 (4), p.043518-043518-5 [Periódico revisado por pares]

American Institute of Physics

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9
Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n -type 4H-SiC
Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n -type 4H-SiC
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Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n -type 4H-SiC

Beyer, F C ; Hemmingsson, C ; Pedersen, H ; Henry, A ; Janzén, E ; Isoya, J ; Morishita, N ; Ohshima, T

Journal of applied physics, 2011-05, Vol.109 (10), p.103703-103703-6 [Periódico revisado por pares]

United States: American Institute of Physics

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10
Apparent anisotropic thermal diffusivity measured in cubic single crystals by transient grating spectroscopy
Apparent anisotropic thermal diffusivity measured in cubic single crystals by transient grating spectroscopy
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Apparent anisotropic thermal diffusivity measured in cubic single crystals by transient grating spectroscopy

Kušnír, Jakub ; Grabec, Tomáš ; Zoubková, Kristýna ; Stoklasová, Pavla ; Sedlák, Petr ; Seiner, Hanuš

Journal of applied physics, 2023-03, Vol.133 (12) [Periódico revisado por pares]

Melville: American Institute of Physics

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