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Interface roughness induced asymmetric magnetic property in sputter-deposited Co/CoO/Co exchange coupled trilayers
Interface roughness induced asymmetric magnetic property in sputter-deposited Co/CoO/Co exchange coupled trilayers
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Interface roughness induced asymmetric magnetic property in sputter-deposited Co/CoO/Co exchange coupled trilayers

Wang, J ; Sannomiya, T ; Shi, J ; Nakamura, Y

Journal of applied physics, 2012-04, Vol.111 (7), p.07D725-07D725-3 [Periódico revisado por pares]

United States: American Institute of Physics

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2
Effects of physical properties of components on reactive nanolayer joining
Effects of physical properties of components on reactive nanolayer joining
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Effects of physical properties of components on reactive nanolayer joining

Wang, J ; Besnoin, E ; Knio, O M ; Weihs, T P

Journal of applied physics, 2005-06, Vol.97 (11), p.114307-114307-7 [Periódico revisado por pares]

United States: American Institute of Physics

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3
Effect of Ti incorporation on the interfacial and optical properties of HfTiO thin films
Effect of Ti incorporation on the interfacial and optical properties of HfTiO thin films
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Effect of Ti incorporation on the interfacial and optical properties of HfTiO thin films

Liu, M ; Zhang, L D ; He, G ; Wang, X J ; Fang, M

Journal of applied physics, 2010-07, Vol.108 (2), p.024102-024102-4 [Periódico revisado por pares]

United States: American Institute of Physics

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4
The mechanism of Ag top layer on the coercivity enhancement of FePt thin films
The mechanism of Ag top layer on the coercivity enhancement of FePt thin films
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The mechanism of Ag top layer on the coercivity enhancement of FePt thin films

Zhao, Z. L. ; Ding, J. ; Yi, J. B. ; Chen, J. S. ; Zeng, J. H. ; Wang, J. P.

Journal of applied physics, 2005-05, Vol.97 (10) [Periódico revisado por pares]

United States

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5
Formation of grown-in defects in molecular beam epitaxial Ga(In)NP: Effects of growth conditions and postgrowth treatments
Formation of grown-in defects in molecular beam epitaxial Ga(In)NP: Effects of growth conditions and postgrowth treatments
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Formation of grown-in defects in molecular beam epitaxial Ga(In)NP: Effects of growth conditions and postgrowth treatments

Dagnelund, D ; Buyanova, I A ; Wang, X J ; Chen, W M ; Utsumi, A ; Furukawa, Y ; Wakahara, A ; Yonezu, H

Journal of applied physics, 2008-03, Vol.103 (6), p.063519-063519-8 [Periódico revisado por pares]

United States: American Institute of Physics

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6
In situ epitaxial growth of ordered FePt (001) films with ultra small and uniform grain size using a RuAl underlayer
In situ epitaxial growth of ordered FePt (001) films with ultra small and uniform grain size using a RuAl underlayer
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In situ epitaxial growth of ordered FePt (001) films with ultra small and uniform grain size using a RuAl underlayer

Shen, W K ; Judy, J H ; Wang, Jian-Ping

Journal of applied physics, 2005-05, Vol.97 (10), p.10H301-10H301-3 [Periódico revisado por pares]

United States: American Institute of Physics

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7
Suppression of superconductivity in epitaxial NbN ultrathin films
Suppression of superconductivity in epitaxial NbN ultrathin films
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Suppression of superconductivity in epitaxial NbN ultrathin films

Kang, L ; Jin, B B ; Liu, X Y ; Jia, X Q ; Chen, J ; Ji, Z M ; Xu, W W ; Wu, P H ; Mi, S B ; Pimenov, A ; Wu, Y J ; Wang, B G

Journal of applied physics, 2011-02, Vol.109 (3), p.033908-033908-5 [Periódico revisado por pares]

United States: American Institute of Physics

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8
A continuum model with a percolation threshold and tunneling-assisted interfacial conductivity for carbon nanotube-based nanocomposites
A continuum model with a percolation threshold and tunneling-assisted interfacial conductivity for carbon nanotube-based nanocomposites
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A continuum model with a percolation threshold and tunneling-assisted interfacial conductivity for carbon nanotube-based nanocomposites

Wang, Yang ; Weng, George J. ; Meguid, Shaker A. ; Hamouda, Abdel Magid

Journal of applied physics, 2014-05, Vol.115 (19) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Contact-free sheet resistance determination of large area graphene layers by an open dielectric loaded microwave cavity
Contact-free sheet resistance determination of large area graphene layers by an open dielectric loaded microwave cavity
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Contact-free sheet resistance determination of large area graphene layers by an open dielectric loaded microwave cavity

Shaforost, O. ; Wang, K. ; Goniszewski, S. ; Adabi, M. ; Guo, Z. ; Hanham, S. ; Gallop, J. ; Hao, L. ; Klein, N.

Journal of applied physics, 2015-01, Vol.117 (2) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Carrier transfer in vertically stacked quantum ring-quantum dot chains
Carrier transfer in vertically stacked quantum ring-quantum dot chains
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Carrier transfer in vertically stacked quantum ring-quantum dot chains

Mazur, Yu. I. ; Lopes-Oliveira, V. ; de Souza, L. D. ; Lopez-Richard, V. ; Teodoro, M. D. ; Dorogan, V. G. ; Benamara, M. ; Wu, J. ; Tarasov, G. G. ; Marega, E. ; Wang, Z. M. ; Marques, G. E. ; Salamo, G. J.

Journal of applied physics, 2015-04, Vol.117 (15) [Periódico revisado por pares]

Melville: American Institute of Physics

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