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1 |
Material Type: Artigo
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Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic TemperaturesWang, Ziyi ; Povolotskyi, Michael ; Vasileska, DragicaIEEE transactions on electron devices, 2024, Vol.71 (6), p.3838-3844 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Highly Thermoelectric Efficient Armchair Silicene Nanoribbons With Silicon Adatom DefectsSirohi, Ankit ; Singh, JawarIEEE transactions on electron devices, 2022-12, Vol.69 (12), p.7128-7134 [Periódico revisado por pares]New York: IEEETexto completo disponível |
3 |
Material Type: Artigo
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Thermal Conductivity Model to Analyze the Thermal Implications in Nanowire FETsKumar, Nitish ; Kaushik, Pragyey Kumar ; Kumar, Sushil ; Gupta, Ankur ; Singh, PushpaprajIEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6388-6393 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity ModelXing, Qian ; Su, Yali ; Lai, Junhua ; Li, Bo ; Li, Binghong ; Bu, Jianhui ; Zhang, GuoheIEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4129-4137 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Study on Degradation Mechanisms of Thermal Conductivity for Confined Nanochannel in Gate-All-Around Silicon Nanowire Field-Effect TransistorsLai, Junhua ; Su, Yali ; Bu, Jianhui ; Li, Binhong ; Li, Bo ; Zhang, GuoheIEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4060-4066 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Numerical Simulation of Thermal Conductivity of SiNW-SiGe0.3 Composite for Thermoelectric ApplicationsLee, Ming-Yi ; Li, Yiming ; Chuang, Min-Hui ; Ohori, Daisuke ; Samukawa, SeijiIEEE transactions on electron devices, 2020-05, Vol.67 (5), p.2088-2092 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Size-Dependent Thermal Boundary Resistance and Thermal Conductivity in Si/Ge Core-Shell NanowiresZhang, Liang ; Ouyang, GangIEEE transactions on electron devices, 2018-01, Vol.65 (1), p.361-366 [Periódico revisado por pares]IEEETexto completo disponível |
8 |
Material Type: Artigo
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Influence of Dopants on the Thermal Conductance of GaN-Sapphire InterfaceZheng, H. ; Jagannadham, K.IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1911-1915 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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Material Type: Artigo
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Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device SimulationFiegna, C. ; Yang Yang ; Sangiorgi, E. ; O'Neill, A.G.IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.233-244 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Quantum Modeling of Thermoelectric Properties of Si/Ge/Si SuperlatticesBulusu, A. ; Walker, D.G.IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.423-429 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |