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Refinado por: assunto: Gallium Oxides remover Applied Physics Letters remover
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Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3
Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3
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Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3

Shahin, David I. ; Tadjer, Marko J. ; Wheeler, Virginia D. ; Koehler, Andrew D. ; Anderson, Travis J. ; Eddy, Charles R. ; Christou, Aris

Applied physics letters, 2018-01, Vol.112 (4) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Wide range temperature-dependent (80–630 K) study of Hall effect and the Seebeck coefficient of β-Ga2O3 single crystals
Wide range temperature-dependent (80–630 K) study of Hall effect and the Seebeck coefficient of β-Ga2O3 single crystals
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Wide range temperature-dependent (80–630 K) study of Hall effect and the Seebeck coefficient of β-Ga2O3 single crystals

Kumar, Ashish ; Singh, Saurabh ; Tak, Bhera Ram ; Patel, Ashutosh ; Asokan, K. ; Kanjilal, D.

Applied physics letters, 2021-02, Vol.118 (6) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Swift heavy ion irradiation-induced modifications in the electrical and surface properties of β-Ga2O3
Swift heavy ion irradiation-induced modifications in the electrical and surface properties of β-Ga2O3
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Swift heavy ion irradiation-induced modifications in the electrical and surface properties of β-Ga2O3

Manikanthababu, N. ; Tak, B. R. ; Prajna, K. ; Sarkar, S. ; Asokan, K. ; Kanjilal, D. ; Barman, S. R. ; Singh, R. ; Panigrahi, B. K.

Applied physics letters, 2020-10, Vol.117 (14) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices
GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices
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GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

Ajia, I. A. ; Yamashita, Y. ; Lorenz, K. ; Muhammed, M. M. ; Spasevski, L. ; Almalawi, D. ; Xu, J. ; Iizuka, K. ; Morishima, Y. ; Anjum, D. H. ; Wei, N. ; Martin, R. W. ; Kuramata, A. ; Roqan, I. S.

Applied physics letters, 2018-08, Vol.113 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals
Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals
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Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals

Onuma, T. ; Saito, S. ; Sasaki, K. ; Goto, K. ; Masui, T. ; Yamaguchi, T. ; Honda, T. ; Kuramata, A. ; Higashiwaki, M.

Applied physics letters, 2016-03, Vol.108 (10) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Electroreflectance study on optical anisotropy in β-Ga2O3
Electroreflectance study on optical anisotropy in β-Ga2O3
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Electroreflectance study on optical anisotropy in β-Ga2O3

Onuma, T. ; Tanaka, K. ; Sasaki, K. ; Yamaguchi, T. ; Honda, T. ; Kuramata, A. ; Yamakoshi, S. ; Higashiwaki, M.

Applied physics letters, 2019-12, Vol.115 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals
Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals
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Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals

Reinertsen, Vilde M. ; Weiser, Philip M. ; Frodason, Ymir K. ; Bathen, Marianne E. ; Vines, Lasse ; Johansen, Klaus Magnus

Applied physics letters, 2020-12, Vol.117 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
High temperature (500 °C) operating limits of oxidized platinum group metal (PtOx, IrOx, PdOx, RuOx) Schottky contacts on β-Ga2O3
High temperature (500 °C) operating limits of oxidized platinum group metal (PtOx, IrOx, PdOx, RuOx) Schottky contacts on β-Ga2O3
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High temperature (500 °C) operating limits of oxidized platinum group metal (PtOx, IrOx, PdOx, RuOx) Schottky contacts on β-Ga2O3

Hou, C. ; York, K. R. ; Makin, R. A. ; Durbin, S. M. ; Gazoni, R. M. ; Reeves, R. J. ; Allen, M. W.

Applied physics letters, 2020-11, Vol.117 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Three-dimensional anisotropic thermal conductivity tensor of single crystalline β-Ga2O3
Three-dimensional anisotropic thermal conductivity tensor of single crystalline β-Ga2O3
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Three-dimensional anisotropic thermal conductivity tensor of single crystalline β-Ga2O3

Jiang, Puqing ; Qian, Xin ; Li, Xiaobo ; Yang, Ronggui

Applied physics letters, 2018-12, Vol.113 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen
High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen
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High resistivity halide vapor phase homoepitaxial β-Ga2O3 films co-doped by silicon and nitrogen

Tadjer, Marko J. ; Koehler, Andrew D. ; Freitas, Jaime A. ; Gallagher, James C. ; Specht, Matty C. ; Glaser, Evan R. ; Hobart, Karl D. ; Anderson, Travis J. ; Kub, Fritz J. ; Thieu, Quang T. ; Sasaki, Kohei ; Wakimoto, Daiki ; Goto, Ken ; Watanabe, Shinya ; Kuramata, Akito

Applied physics letters, 2018-11, Vol.113 (19) [Periódico revisado por pares]

Melville: American Institute of Physics

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