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1 |
Material Type: Ata de Congresso
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Preface: Third International Conference on Advances in Physical Sciences and Materials (ICAPSM 2022)P, Thangaraj ; H, Shankar ; K, Mohana SundaramAIP Conference Proceedings, 2023, Vol.2901 (1) [Periódico revisado por pares]Melville: American Institute of PhysicsSem texto completo |
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2 |
Material Type: Ata de Congresso
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Preface: 11th Int’l Conference on Mathematical Modeling in Physical SciencesVlachos, DimitriosAIP Conference Proceedings, 2023, Vol.2872 (1) [Periódico revisado por pares]Melville: American Institute of PhysicsSem texto completo |
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3 |
Material Type: Ata de Congresso
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Preface: 4th National Conference on “Recent Advancements in Physical Sciences”Pandey, Rampal ; Tripathi, Dharmendra ; Sahariya, Jagrati ; Sharma, Kusum ; Mishra, RakeshAIP Conference Proceedings, 2024, Vol.3025 (1) [Periódico revisado por pares]Melville: American Institute of PhysicsSem texto completo |
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4 |
Material Type: Ata de Congresso
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Preface: 3rd National Conference on “Recent Advancements in Physical Sciences”Pandey, Rampal ; Tripathi, Dharmendra ; Sahariya, Jagrati ; Sharma, Kusum ; Mishra, RakeshAIP Conference Proceedings, 2023, Vol.2728 (1) [Periódico revisado por pares]Melville: American Institute of PhysicsSem texto completo |
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5 |
Material Type: Artigo
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Enhanced piezoelectric effect in Janus group-III chalcogenide monolayersGuo, Yu ; Zhou, Si ; Bai, Yizhen ; Zhao, JijunApplied physics letters, 2017-04, Vol.110 (16) [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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Placing single atoms in graphene with a scanning transmission electron microscopeDyck, Ondrej ; Kim, Songkil ; Kalinin, Sergei V. ; Jesse, StephenApplied physics letters, 2017-09, Vol.111 (11) [Periódico revisado por pares]United States: American Institute of Physics (AIP)Texto completo disponível |
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7 |
Material Type: Artigo
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Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristicsHigashiwaki, Masataka ; Sasaki, Kohei ; Kamimura, Takafumi ; Hoi Wong, Man ; Krishnamurthy, Daivasigamani ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, ShigenobuApplied physics letters, 2013-09, Vol.103 (12) [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Artigo
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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substratesHigashiwaki, Masataka ; Sasaki, Kohei ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, ShigenobuApplied physics letters, 2012-01, Vol.100 (1) [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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An optically pumped 2.5 μm GeSn laser on Si operating at 110 KAl-Kabi, Sattar ; Ghetmiri, Seyed Amir ; Margetis, Joe ; Pham, Thach ; Zhou, Yiyin ; Dou, Wei ; Collier, Bria ; Quinde, Randy ; Du, Wei ; Mosleh, Aboozar ; Liu, Jifeng ; Sun, Greg ; Soref, Richard A. ; Tolle, John ; Li, Baohua ; Mortazavi, Mansour ; Naseem, Hameed A. ; Yu, Shui-QingApplied physics letters, 2016-10, Vol.109 (17) [Periódico revisado por pares]Texto completo disponível |
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10 |
Material Type: Artigo
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Monolayer Topological Insulators: Silicene, Germanene, and StaneneEzawa, MotohikoJournal of the Physical Society of Japan, 2015-12, Vol.84 (12), p.121003 [Periódico revisado por pares]Texto completo disponível |