Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Multimode AlGaAs-on-Insulator Microring Resonators for Nonlinear PhotonicsYe, Chaochao ; Liu, Yang ; Zhou, Yueguang ; Zhao, Yanjing ; Zheng, Yi ; Kim, Chanju ; Oxenlowe, Leif Kastuo ; Yvind, Kresten ; Pu, MinhaoIEEE journal of selected topics in quantum electronics, 2024-09, Vol.30 (5: Microresonator Frequency Comb Technologies), p.1-11 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF-Drift-Diffusion ApproachGullino, Alberto ; Torrelli, Valerio ; D'Alessandro, Martino ; Tibaldi, Alberto ; Bertazzi, Francesco ; Goano, Michele ; Debernardi, PierluigiIEEE photonics journal, 2024-04, Vol.16 (2), p.1-9 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Impact of Irradiation Temperature, Doping, and Proton Energy on InGaAs PhotodiodesBenfante, Marco ; Reverchon, Jean-Luc ; Virmontois, Cedric ; Demiguel, Stephane ; Goiffon, VincentIEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.719-727 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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InGaP/AlGaAs Near-UV and Visible Avalanche Photodiodes for Li-Fi ApplicationWang, Jingyi ; Ge, Huachen ; Liao, Yue ; Shen, Daqi ; Li, Linze ; Zha, Mengxin ; Long, Tianyu ; Chen, Qiushi ; Xie, Zhiyang ; Ji, Haiming ; Tian, Pengfei ; Chen, BaileIEEE photonics technology letters, 2024-03, Vol.36 (5), p.293-296New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)Texto completo disponível |
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5 |
Material Type: Artigo
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Development of InGaAs/AlGaAsSb Geiger Mode Avalanche PhotodiodesTaylor-Mew, J. ; Collins, X. ; White, B. ; Tan, C. H. ; Ng, J. S.IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1994-1998 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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A DC to 25 MHz Current Sensing Interface for Hall-effect SensorHassan, Ayesha ; Mahar, Asma ; Shetty, Satish ; Lalwani, Anand Vikas ; Faruque, K. Asif ; Paul, Riya ; Senesky, Debbie G. ; Salamo, Gregory J. ; Mantooth, H. AlanIEEE sensors journal, 2024-01, Vol.24 (7), p.1-1 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Design and Evaluation of Graphene-Silicon Heterojunction LEDs for Breast Cancer DetectionBhowmick, Chiranjib ; Asghar, Sharique Ali ; Dutta, Pranab Kumar ; Mahadevappa, ManjunathaIEEE transactions on nanotechnology, 2024-01, Vol.23, p.1-7 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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Mechanism of Nonuniform Damage Induced by Low-Energy Protons in GaAs MESFETsHou, Shuhao ; Dong, Shangli ; Yang, Jianqun ; Guan, Enhao ; Liu, Zhongli ; Shao, Guojian ; Zhang, Yubao ; Li, XingjiIEEE transactions on nuclear science, 2023-12, Vol.70 (12), p.2590-2596 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Effect of Geometry on the Frequency Limit of GaAs/AlGaAs 2-D Electron Gas (2DEG) Hall Effect SensorsLalwani, Anand ; Giparakis, Miriam ; Arora, Kanika ; Maharaj, Avidesh ; Levy, Akash ; Strasser, Gottfried ; Andrews, Aaron Maxwell ; Kock, Helmut ; Senesky, Debbie G.IEEE sensors letters, 2023-12, Vol.7 (12), p.1-4 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Effects of Al2O3 Interfacial Layer Thickness for HZO/InGaAs Ferroelectric Capacitors With Superior Polarization and MOS Interface PropertiesKo, Kyul ; Ahn, Dae-Hwan ; Suh, Hoyoung ; Ju, Byeong-Kwon ; Han, Jae-HoonIEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6237-6243 [Periódico revisado por pares]New York: IEEETexto completo disponível |