Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Microanalysis of wurtzite-GaN single crystals prepared by d.c. arc dischargeYu, San ; Li, Hongdong ; Yang, Haibin ; Li, Dongmei ; Sun, Haiping ; Zou, GuangtianMaterials letters, 1996, Vol.26 (1), p.77-80 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Determination of Zeeman splittings of excitonic transitions in wurtzite GaN by mean of magnetocircular dichroism techniqueJulier, M ; Campo, J ; Coquillat, D ; Lascaray, J.P ; Scalbert, D ; Briot, OMaterials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.126-129 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Polytypes in GaN films grown by metalorganic chemical vapor deposition on (0 0 0 1) sapphire substrateJoo Lee, Hwack ; Ryu, Hyun ; Lee, Cheul-Ro ; Kim, KeunjooJournal of crystal growth, 1998-08, Vol.191 (4), p.621-626 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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A novel crystal defect in epitaxial wurtzite gallium nitride filmWang, S.Q ; Liu, C.PMaterials letters, 1999-02, Vol.38 (3), p.202-207 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Synthesis and structure of nanocrystal-assembled bulk GaNChen, X.L ; Cao, Y.G ; Lan, Y.C ; Xu, X.P ; Li, J.Q ; Lu, K.Q ; Jiang, P.Z ; Xu, T ; Bai, Z.G ; Yu, Y.D ; Liang, J.KJournal of crystal growth, 2000-01, Vol.209 (1), p.208-212 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopyXUE, Q. K ; XUE, Q. Z ; KUWANO, S ; SAKURAI, T ; OHNO, T ; TSONG, I. S. T ; QIU, X. G ; SEGAWA, YThin solid films, 2000-05, Vol.367 (1-2), p.149-158 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
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7 |
Material Type: Artigo
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XRD, XPS, SEM, PL and Raman scattering analysis of synthesised GaN powderSenthil Kumar, M ; Kumar, JMaterials chemistry and physics, 2003-01, Vol.77 (2), p.341-345 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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The influence of the working pressure on the synthesis of GaN nanowires by using MOCVDRa, Yong-Ho ; Navamathavan, R. ; Lee, Young-Min ; Kim, Dong-Wook ; Kim, Jin-Soo ; Lee, In-Hwan ; Lee, Cheul-RoJournal of crystal growth, 2010-03, Vol.312 (6), p.770-774 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Ata de Congresso
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Non-polar GaInN-based light-emitting diodes: an approach for wavelength-stable and polarized-light emittersDetchprohm, Theeradetch ; Zhu, Mingwei ; You, Shi ; Zhao, Liang ; Hou, Wenting ; Stark, Christoph ; Wetzel, ChristianProceedings of SPIE, the International Society for Optical Engineering, 2011, Vol.7954, p.79540N-79540N-12Bellingham WA: SPIETexto completo disponível |
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10 |
Material Type: Artigo
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Self-Assembled GaN Nanowires on DiamondSchuster, Fabian ; Furtmayr, Florian ; Zamani, Reza ; Magén, Cesar ; Morante, Joan R ; Arbiol, Jordi ; Garrido, Jose A ; Stutzmann, MartinNano letters, 2012-05, Vol.12 (5), p.2199-2204 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |