Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Ata de Congresso
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Intracavity molecular spectroscopy in the mid-IR using ultra-broadband optical parametric oscillatorHaakestad, Magnus W ; Lamour, Tobias P ; Leindecker, Nick ; Marandi, Alireza ; Vodopyanov, Konstantin L Vodopyanov, Konstantin LSPIE 2013Sem texto completo |
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12 |
Material Type: Ata de Congresso
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Mid-infrared ZnGeP2-based source with 0.2 J pulse energyHaakestad, Magnus W. ; Fonnum, Helge ; Lippert, Espen2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications, 2014, p.1-2The Optical SocietyTexto completo disponível |
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13 |
Material Type: Ata de Congresso
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(Invited) Probing the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic SimulationsPourtois, Geoffrey ; Dabral, Ashish ; Sankaran, Kiroubanand ; Magnus, Wim ; Yu, Hao ; de Jamblinne de Meux, Albert ; Lu, Anh Khoa Augustin ; Clima, Sergiu ; Stokbro, Kurt ; Schaekers, Marc ; Houssa, Michel ; Collaert, Nadine ; Horiguchi, NaotoECS transactions, 2017, Vol.80 (1), p.303-311The Electrochemical Society, IncTexto completo disponível |
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14 |
Material Type: Ata de Congresso
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Modeling of inter-ribbon tunneling in grapheneVan De Put, M. L. ; Vandenberghe, W. G. ; Magnus, W. ; Soree, B. ; Fischetti, M. V.2015 International Workshop on Computational Electronics (IWCE), 2015, p.1-4IWCESem texto completo |
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15 |
Material Type: Ata de Congresso
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15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistorsVerreck, D. ; Van De Put, M. L. ; Verhulst, A. S. ; Soree, B. ; Magnus, W. ; Dabral, A. ; Thean, A. ; Groeseneken, G.2015 International Workshop on Computational Electronics (IWCE), 2015, p.1-4IWCESem texto completo |
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16 |
Material Type: Ata de Congresso
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Mobility degradation in high-k transistors: the role of the charge scatteringLujan, G.S. ; Kubicek, S. ; De Gendt, S. ; Heyns, M. ; Magnus, W. ; De Meyer, K.ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003, 2003, p.399-402IEEETexto completo disponível |
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17 |
Material Type: Ata de Congresso
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A new method to calculate leakage current and its applications for sub-45nm MOSFETsLujan, G.S. ; Magnus, W. ; Soree, B. ; Pourghaderi, M.A. ; Veloso, A. ; van Da, M.J.H. ; Lauwers, A. ; Kubicek, S. ; De Gendt, S. ; Heyns, M. ; De Meyer, K.Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005, 2005, p.489-492IEEETexto completo disponível |
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18 |
Material Type: Ata de Congresso
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Novel Device Concepts for Nanotechnology: The Nanowire Pinch-Off FET and Graphene TunnelFETSorée, Bart ; Magnus, Wim ; Szepieniec, Mark ; Vandenberghe, William ; Verhulst, Anne ; Pourtois, Geoffrey ; Groeseneken, Guido ; De Gendt, Stefan ; Heyns, MarcECS transactions, 2010, Vol.28 (5), p.15-26Texto completo disponível |
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19 |
Material Type: Ata de Congresso
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Quantum simulations of electrostatics in Si cylindrical nanowire pinch-off nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientationsPham, A T ; Sorée, B ; Magnus, W ; Jungemann, C ; Meinerzhagen, B ; Pourtois, GUlis 2011 Ultimate Integration on Silicon, 2011, p.1-4IEEETexto completo disponível |
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20 |
Material Type: Ata de Congresso
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Field induced quantum confinement in Indirect Semiconductors: Quantum mechanical and modified semiclassical modelVandenberghe, W. G. ; Soree, B. ; Magnus, W. ; Groeseneken, G. ; Verhulst, A. S. ; Fischetti, M. V.2011 International Conference on Simulation of Semiconductor Processes and Devices, 2011, p.271-274IEEETexto completo disponível |