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1 |
Material Type: Artigo
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Pd2Si surfaces thermally enriched in silicon: Evidence of new Si:Pd bondsAbbati, I. ; Rossi, G. ; Braicovich, L. ; Lindau, I. ; Spicer, W. E. ; De Michelis, B.Journal of applied physics, , Vol.52 (11), p.6994-6996 [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Electron refraction at lateral atomic interfacesAbd El-Fattah, Z. M. ; Kher-Elden, M. A. ; Yassin, O. ; El-Okr, M. M. ; Ortega, J. E. ; García de Abajo, F. J.Journal of applied physics, 2017-11, Vol.122 (19) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Experimental determination of band offsets at the SnS/CdS and SnS / InS x O y heterojunctionsAbdel Haleem, A M ; Ichimura, MJournal of applied physics, 2010-02, Vol.107 (3), p.034507-034507-5 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Electronic and magnetic properties of vanadium dichalcogenides: A brief overview on theory and experimentAbdul Wasey, A. H. M. ; Das, G. P.Journal of Applied Physics, 2022-05, Vol.131 (19) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Electrical characteristics of Ti/Si(100) interfacesABOELFOTOH, M. OJournal of applied physics, 1988-10, Vol.64 (8), p.4046-4055 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
6 |
Material Type: Artigo
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Combined electron backscatter diffraction and cathodoluminescence measurements on CuInS{sub 2}/Mo/glass stacks and CuInS{sub 2} thin-film solar cellsAbou-Ras, D. ; Nichterwitz, M. ; Unold, T. ; Klaer, J. ; Schock, H.-W. ; Jahn, U.Journal of applied physics, 2010-01, Vol.107 (1) [Periódico revisado por pares]United StatesTexto completo disponível |
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Material Type: Artigo
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Structural phase transition in early growth of Bi2Sr2CaCu2O8+x films on SrTiO3 substratesAbrecht, M. ; Ariosa, D. ; Onellion, M. ; Margaritondo, G. ; Pavuna, D.Journal of applied physics, 2002-02, Vol.91 (3), p.1187-1190 [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Quantum size effects in Bi films grown on GaAs (110)Abu-Samak, MahmoudJournal of applied physics, 2008-12, Vol.104 (12), p.123714-123714-5 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Physical characterization of n -GaAs on p -Si formed by low-temperature pulsed-laser depositionAcharya, K P ; Khatri, H ; Ullrich, BJournal of applied physics, 2009-05, Vol.105 (10), p.103111-103111-5 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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Effect of O 2 + , H 2 + +O 2 + , and N 2 + +O 2 + ion-beam irradiation on the field emission properties of carbon nanotubesAcuña, J J. S ; Escobar, M ; Goyanes, S N ; Candal, R J ; Zanatta, A R ; Alvarez, FJournal of applied physics, 2011-06, Vol.109 (11), p.114317-114317-7 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |