Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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13 Gbit s WDM-OFDM PON using RSOA-based colourless ONU with seeding light source in local exchangeCHOW, C. W ; YEH, C. H ; WU, Y. F ; CHEN, H. Y ; LIN, Y. H ; SUNG, J. Y ; LIU, Y ; PAN, C.-LElectronics letters, 2011-10, Vol.47 (22), p.1235-1236 [Periódico revisado por pares]Stevenage: Institution of Engineering and TechnologySem texto completo |
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12 |
Material Type: Ata de Congresso
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1.3-μm InAs Quantum Dot Vertical Cavity Surface Emitting Lasers with Planar Electrodes ConfigurationDING, Y ; FAN, W. J ; WANG, W ; XU, D. W ; TONG, C. Z ; LOKE, W. K ; YOON, S. F ; ZHANG, D. H ; LIU, Y ; ZHU, N. H ; ZHAO, L. JProceedings of SPIE, the International Society for Optical Engineering, 2009, Vol.7158Bellingham, Wash: SPIETexto completo disponível |
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13 |
Material Type: Artigo
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140-GHz V-Shaped Microstrip Meander-Line Traveling Wave TubeShen, F. ; Wei, Y.-Y. ; Xu, X. ; Liu, Y. ; Yin, H.-R. ; Gong, Y.-B. ; Wang, W.-X.Journal of electromagnetic waves and applications, 2012-01, Vol.26 (1), p.89-98 [Periódico revisado por pares]Taylor & Francis GroupTexto completo disponível |
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14 |
Material Type: Artigo
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14.2 W/mm internally-matched AlGaN/GaN HEMT for X-band applicationsPeng, M.Z. ; Zheng, Y.K. ; Luo, W.J. ; Liu, X.Y.Solid-state electronics, 2011-10, Vol.64 (1), p.63-66 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
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15 |
Material Type: Ata de Congresso
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14nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applicationsKrivokapic, Z. ; Rana, U. ; Galatage, R. ; Razavieh, A. ; Aziz, A. ; Liu, J. ; Shi, J. ; Kim, H. J. ; Sporer, R. ; Serrao, C. ; Busquet, A. ; Polakowski, P. ; Muller, J. ; Kleemeier, W. ; Jacob, A. ; Brown, D. ; Knorr, A. ; Carter, R. ; Banna, S.2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.15.1.1-15.1.4IEEETexto completo disponível |
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16 |
Material Type: Ata de Congresso
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1.5 THz heterodyne receiver with waveguide superconducting NbTiN hot electron bolometer mixerJiang, L ; Shiino, T ; Yamamoto, S ; Zhang, W ; Liu, Y. FProceedings of SPIE, the International Society for Optical Engineering, 2011, Vol.8195, p.819506-819506-9Bellingham WA: SPIESem texto completo |
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17 |
Material Type: Artigo
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1.5-W CW S-band GaInP/GaAs/GaInP double heterojunction bipolar transistorLiu, W. ; Beam, E. ; Khatibzadeh, A.IEEE electron device letters, 1994-06, Vol.15 (6), p.215-217 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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18 |
Material Type: Artigo
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155 GHz MMIC LNAs with 12 dB gain fabricated using a high yield InP HEMT MMIC processLai, R ; Wang, H ; Chen, Y C ; Block, TMicrowave Journal, 1997-09, Vol.40 (9), p.166-171Dedham: Horizon House Publications, IncTexto completo disponível |
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19 |
Material Type: Ata de Congresso
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16-bit teaching microprocessor design and applicationXiao Tiejun ; Liu Fang2008 IEEE International Symposium on IT in Medicine and Education, 2008, p.160-163IEEETexto completo disponível |
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20 |
Material Type: Artigo
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160-190-GHz monolithic low-noise amplifiersKok, Y.L. ; Wang, H. ; Huang, T.W. ; Lai, R. ; Barsky, M. ; Chen, Y.C. ; Sholley, M. ; Block, T. ; Streit, D.C. ; Allen, B.R. ; Samoska, L. ; Gaier, T.IEEE microwave and guided wave letters, 1999-08, Vol.9 (8), p.311-313New York, NY: IEEETexto completo disponível |