Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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Non-Uniform Strain Field in a Wurtzite GaN Cylinder under Compression and the Related End Friction Effect on Quantum Behavior of Valence-BandsWei, X. X.Mechanics of advanced materials and structures, 2008-12, Vol.15 (8), p.612-622 [Periódico revisado por pares]Taylor & Francis GroupTexto completo disponível |
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12 |
Material Type: Artigo
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Epitaxial Growth and Ferroelectricity of BaTiO3 on SrRuO3/TiO2 Buffered GaNLuo, W. B. ; Zhu, J. ; Li, Y. R. ; Zhang, Y. ; Chen, H.Ferroelectrics, 2010-01, Vol.406 (1), p.56-61 [Periódico revisado por pares]Taylor & Francis GroupTexto completo disponível |
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13 |
Material Type: Artigo
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The influence of the working pressure on the synthesis of GaN nanowires by using MOCVDRa, Yong-Ho ; Navamathavan, R. ; Lee, Young-Min ; Kim, Dong-Wook ; Kim, Jin-Soo ; Lee, In-Hwan ; Lee, Cheul-RoJournal of crystal growth, 2010-03, Vol.312 (6), p.770-774 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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14 |
Material Type: Artigo
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Synthesis and characterization of heteroepitaxial GaN films on Si(111)Liang, Ting ; Tang, Jianjun ; Xiong, Jijun ; Wang, Yong ; Xue, Chenyang ; Yang, Xujun ; Zhang, WendongVacuum, 2010-04, Vol.84 (9), p.1154-1158 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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15 |
Material Type: Artigo
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GaN buffer layer growth by MOCVD using a thermodynamic non-equilibrium modelGuarneros, C. ; Sánchez, V.Vacuum, 2010-05, Vol.84 (10), p.1187-1190 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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16 |
Material Type: Artigo
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Synthesis of hexagonal and cubic GaN thin film on Si (111) using a low-cost electrochemical deposition techniqueAl-Heuseen, K. ; Hashim, M.R. ; Ali, N.K.Materials letters, 2010-07, Vol.64 (14), p.1604-1606 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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17 |
Material Type: Ata de Congresso
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Non-polar GaInN-based light-emitting diodes: an approach for wavelength-stable and polarized-light emittersDetchprohm, Theeradetch ; Zhu, Mingwei ; You, Shi ; Zhao, Liang ; Hou, Wenting ; Stark, Christoph ; Wetzel, ChristianProceedings of SPIE, the International Society for Optical Engineering, 2011, Vol.7954, p.79540N-79540N-12Bellingham WA: SPIETexto completo disponível |
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18 |
Material Type: Artigo
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Synthesis of GaN nanowires by CVD method: effect of reaction temperatureShi, Feng ; Wang, Ying ; Xue, ChengshanJournal of experimental nanoscience, 2011-06, Vol.6 (3), p.238-247 [Periódico revisado por pares]Taylor & Francis GroupTexto completo disponível |
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19 |
Material Type: Ata de Congresso
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Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphireRogers, D J ; Ougazzaden, A ; Sandana, V E ; Moudakir, T ; Ahaitouf, A ; Teherani, FHosseini ; Gautier, S ; Goubert, L ; Davidson, IA ; Prior, KA ; McClintock, R P ; Bove, P ; Drouhin, H-J ; Razeghi, MProceedings of SPIE, the international society for optical engineering, 2012, Vol.8263Sem texto completo |
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20 |
Material Type: Artigo
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Electron Spin Transition Line-width of Mn-doped Wurtzite GaN Film for the Quantum LimitPark, Jung-Il ; Lee, Hyeong-Rag ; Lee, Su-Ho ; Hyun, Dong-GeulJournal of magnetics, 2012-03, Vol.17 (1), p.13-18 [Periódico revisado por pares]Sem texto completo |