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Green emission from a 'EU' POT. 2+'-activated 'SR''AL' IND. 2''O' IND. 4' phosphor a photoluminescence and electron spin resonance study
Green emission from a 'EU' POT. 2+'-activated 'SR''AL' IND. 2''O' IND. 4' phosphor a photoluminescence and electron spin resonance study
Material Type:
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Green emission from a 'EU' POT. 2+'-activated 'SR''AL' IND. 2''O' IND. 4' phosphor a photoluminescence and electron spin resonance study

Vijay Singh D Prakash; N Singh; M. S Pathak; Hakyung Jeong; T. K. Gundu Rao; V Dubey; V. K Rai; Shigueo Watanabe

Journal of Materials Science: Materials in Electronics Dordrecht v. 29, n. 4, p. 3006-3013, fev. 2018

Dordrecht 2018

Item não circula. Consulte sua biblioteca.(Acessar)

2
PL and ESR of 'GD' POT. 3+' in 'LA''MG''AL' IND. 11''O' IND. 19' phosphors
PL and ESR of 'GD' POT. 3+' in 'LA''MG''AL' IND. 11''O' IND. 19' phosphors
Material Type:
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PL and ESR of 'GD' POT. 3+' in 'LA''MG''AL' IND. 11''O' IND. 19' phosphors

Vijay Singh M. S Pathak; N Singh; T. K. Gundu Rao; Vijay Singh; Pramod K Singh; Young-Wan Kwon; Shigueo Watanabe

Journal of Materials Science: Materials in Electronics Dordrecht v. 29, n. 6, p. 4632-4638, mar. 2018

Dordrecht 2018

Item não circula. Consulte sua biblioteca.(Acessar)

3
UV radiation emitting 'GD' POT. 3+' activated 'SR' INd. 2''SI''O' INd. 4' host system prepared by sol–gel procedure structural, electron paramagnetic resonance, and luminescence studies
UV radiation emitting 'GD' POT. 3+' activated 'SR' INd. 2''SI''O' INd. 4' host system prepared by sol–gel procedure structural, electron paramagnetic resonance, and luminescence studies
Material Type:
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UV radiation emitting 'GD' POT. 3+' activated 'SR' INd. 2''SI''O' INd. 4' host system prepared by sol–gel procedure structural, electron paramagnetic resonance, and luminescence studies

Vijay Singh M. S Pathak; N Singh; T. K. Gundu Rao; Sumandeep Kaur; M Jayasimhadri; Shigueo Watanabe

Journal of Materials Science: Materials in Electronics Dordrecht v. 29, n. 24, p. 20759-20767, dez. 2018

Dordrecht 2018

Item não circula. Consulte sua biblioteca.(Acessar)

4
Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices
Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices
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Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices

NAHAR, R. K ; SINGH, Vikram ; SHARMA, Aparna

Journal of materials science. Materials in electronics, 2007-06, Vol.18 (6), p.615-619 [Periódico revisado por pares]

Norwell, MA: Springer

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  1. Recursos Online (1)
  2. Revistas revisadas por pares (1)

Autor/Criador 

  1. Pathak, M  (3)
  2. Singh, V  (3)
  3. Watanabe, S  (3)
  4. Singh, N  (3)
  5. Rao, T  (3)
  6. Kaur, S  (1)
  7. Kwon, Y  (1)
  8. Jeong, H  (1)
  9. Rai, V  (1)
  10. Dubey, V  (1)
  11. Jayasimhadri, M  (1)
  12. Singh, P  (1)
  13. Prakash, D  (1)
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Deste Autor:

  1. Pathak, M
  2. Singh, V
  3. Watanabe, S
  4. Singh, N
  5. Rao, T

Neste Assunto:

  1. Termoluminescência
  2. Vidro
  3. Dosimetria
  4. Atomic And Molecular Physics, And Optics
  5. Compound Structure Devices

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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