Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Strain Tailoring in 3C-SiC Heteroepitaxial Layers Grown on Si(100)Ferro, G. ; Chassagne, T. ; Leycuras, A. ; Cauwet, F. ; Monteil, Y.Chemical vapor deposition, 2006-09, Vol.12 (8-9), p.483-488 [Periódico revisado por pares]Weinheim: WILEY-VCH VerlagTexto completo disponível |
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2 |
Material Type: Artigo
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Fabrication of monocrystalline 3C–SiC resonators for MHz frequency sensors applicationsPlacidi, M. ; Godignon, P. ; Mestres, N. ; Abadal, G. ; Ferro, G. ; Leycuras, A. ; Chassagne, T.Sensors and actuators. B, Chemical, 2008-07, Vol.133 (1), p.276-280 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Role of oxygen in the formation of voids at the SiC–Si interfaceLeycuras, A.Applied physics letters, 1997-03, Vol.70 (12), p.1533-1535 [Periódico revisado por pares]Texto completo disponível |
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4 |
Material Type: Artigo
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Etching nano-holes in silicon carbide using catalytic platinum nano-particlesMOYEN, E ; WULFHEKEL, W ; LEE, W ; LEYCURAS, A ; NIELSCH, K ; GÖSELE, U ; HANBÜCKEN, MApplied physics. A, Materials science & processing, 2006-09, Vol.84 (4), p.369-371 [Periódico revisado por pares]Berlin: SpringerTexto completo disponível |
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5 |
Material Type: Artigo
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Investigation of 2 Inch SiC Layers Grown in a Resistively-Heated LP-CVD Reactor with Horizontal "Hot-Walls"Chassagne, Thierry ; Leycuras, André ; Balloud, Carole ; Arcade, P. ; Peyre, Hervé ; Juillaguet, SandrineMaterials science forum, 2004-01, Vol.457-460, p.273-276 [Periódico revisado por pares]Sem texto completo |
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6 |
Material Type: Artigo
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Vertical nanopatterning of 6H-SiC(0001) surfaces using gold-metal nanotube membrane lithographyLEE, W ; MOYEN, E ; WULFHEKEL, W ; LEYCURAS, A ; NIELSCH, K ; GÖSELE, U ; HANBÜCKEN, MApplied physics. A, Materials science & processing, 2006-06, Vol.83 (3), p.361-363 [Periódico revisado por pares]Berlin: SpringerTexto completo disponível |
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7 |
Material Type: Artigo
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Control of 3C-SiC/Si wafer bending by the "checker-board" carbonization methodChassagne, T. ; Ferro, G. ; Haas, H. ; Mank, H. ; Leycuras, A. ; Monteil, Y. ; Soares, F. ; Balloud, C. ; Arcade, Ph ; Blanc, C. ; Peyre, H. ; Juillaguet, S. ; Camassel, J.Physica status solidi. A, Applications and materials science, 2005-03, Vol.202 (4), p.524-530 [Periódico revisado por pares]Berlin: WILEY-VCH VerlagTexto completo disponível |
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8 |
Material Type: Artigo
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Low Specific Contact Resistance to 3C-SiC Grown on (100) Si SubstratesBazin, Anne Elisabeth ; Chassagne, Thierry ; Michaud, Jean François ; Leycuras, André ; Portail, Marc ; Zielinski, Marcin ; Collard, Emmanuel ; Alquier, DanielMaterials science forum, 2007-01, Vol.556-557, p.721-724 [Periódico revisado por pares]Sem texto completo |
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9 |
Material Type: Artigo
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Trends in Dopant Incorporation for 3C-SiC Films on SiliconZielinski, Marcin ; Portail, Marc ; Peyre, Hervé ; Chassagne, Thierry ; Ndiaye, S. ; Boyer, Bernard ; Leycuras, André ; Camassel, JeanMaterials science forum, 2007-01, Vol.556-557, p.207-210 [Periódico revisado por pares]Sem texto completo |
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10 |
Material Type: Artigo
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Highly regular nanometer-sized hexagonal pipes in 6H-SiC(0001)WULFHEKEL, W ; SANDER, D ; NITSCHE, S ; LEYCURAS, A ; HANBÜCKEN, MApplied physics. A, Materials science & processing, 2004-08, Vol.79 (3), p.411-413 [Periódico revisado por pares]Berlin: SpringerTexto completo disponível |