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Refinado por: autor: Martino, J remover
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11
Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k
Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k
Material Type:
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Back gate voltage influence on the LDD SOI NMOSFET series resistence extraction from 150 to 300 k

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; Nato Advanced Research Workshop (1998 Kyiv)

Perspectives, science and technologies for novel silicon on insulator devices Kyiv : National Academy of Sciences of Ukraine, 1998

Kyiv National Academy of Sciences of Ukraine 1998

Item não circula. Consulte sua biblioteca.(Acessar)

12
The influence of the back gate voltage on the leakage drain current in accumulation mode SOI pMOSFETs at high temperatures
The influence of the back gate voltage on the leakage drain current in accumulation mode SOI pMOSFETs at high temperatures
Material Type:
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The influence of the back gate voltage on the leakage drain current in accumulation mode SOI pMOSFETs at high temperatures

Marcello Bellodi João Antonio Martino 1959-; International Conference on Microelectronics and Packaging (13. 1998 Curitiba)

SBMicro'ICMP 98 : Proceedings Curitiba : SBMicro/LACTRO/LAC, 1998

Curitiba SBMicro/LACTRO/LAC 1998

Item não circula. Consulte sua biblioteca.(Acessar)

13
Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
Material Type:
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Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets

João Antonio Martino 1959- Eddy Simoen; Ulf Magnusson; Antônio Luís Pacheco Rotondaro; Cor Claeys

v.36, n.6 , p.827-32, jun. 1993 Solid State Electronics

1993

Item não circula. Consulte sua biblioteca.(Acessar)

14
Transient effects in accumulation mode p-channel soi - mosfets operating at 77k
Transient effects in accumulation mode p-channel soi - mosfets operating at 77k
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Transient effects in accumulation mode p-channel soi - mosfets operating at 77k

João Antonio Martino 1959- Antônio Luís Pacheco Rotondaro; Eddy Simoen; Ulf Magnusson; Cor Claeys

New York v.41, n.4 , p.519-23, apr. 1994 Ieee Transactions on Electron Devices

New York 1994

Item não circula. Consulte sua biblioteca.(Acessar)

15
The impact of the temperature on In0.53Ga0.47As nTFETs
The impact of the temperature on In0.53Ga0.47As nTFETs
Material Type:
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The impact of the temperature on In0.53Ga0.47As nTFETs

Caio Cesar Mendes Bordallo Dan Mocuta; Nadine Collaert; A Alian; Eddy Simoen; Cor Claeys; Paula Ghedini Der Agopian; João Antonio Martino 1959-; Rita Rooyackers; Yannick Mols; A Van Dooren; Anne S Verhulst; D Lin

v.18, n. 1,2018 Composants nanoélectroniques

2018

Item não circula. Consulte sua biblioteca.(Acessar)

16
Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
Study of line-TFET analog performance comparing with other TFET and MOSFET architectures
Material Type:
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Study of line-TFET analog performance comparing with other TFET and MOSFET architectures

Paula Ghedini Der Agopian Eddy Simoen; Anne Vandooren; Rita Rooyackers; Aaron Thean; Cor Claeys; João Antonio Martino 1959-; EUROSOI-ULIS 2016

Solid-State Electronics Volume 128, February 2017, Pages 43-47 v. 128, p. 43-47, Fev 2017

2017

Item não circula. Consulte sua biblioteca.(Acessar)

17
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures
Performance of differential pair circuits designed with line tunnel FET devices at different temperatures
Material Type:
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Performance of differential pair circuits designed with line tunnel FET devices at different temperatures

Márcio Dalla Valle Martino Cor Claeys; Paula Ghedini Der Agopian; Rita Rooyackers; Eddy Simoen; João Antonio Martino 1959-

Semiconductor Science and Technology v. 33, n. 7, p. 075012, 2018

2018

Item não circula. Consulte sua biblioteca.(Acessar)

18
Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures
Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures
Material Type:
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Performance of TFET and FinFET devices applied to current mirrors for different dimensions and temperatures

Márcio Dalla Valle Martino João Antonio Martino 1959-; Paula Ghedini Der Agopian; A Vandooren; Rita Rooyackers; Eddy Simoen; Cor Claeys

Semiconductor Science and Technology v. 31, n. 5, 055001, 2016

2016

Item não circula. Consulte sua biblioteca.(Acessar)

19
Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies
Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies
Material Type:
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Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies

Vitor Tatsuo Itocazu Victor Sonnenberg; João Antonio Martino 1959-; Eddy Simoen; Cor Claeys

Journal of Integrated Circuits and Systems v. 12, n. 2, p. 82-88, 2017

2017

Acesso online

20
Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation
Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation
Material Type:
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Analytical Model for Threshold Voltage in UTBB SOI MOSFET in Dynamic Threshold Voltage Operation

Vitor Tatsuo Itocazu João Antonio Martino 1959-; Kátia Regina Akemi Sasaki; Eddy Simoen; Cor Claeys; Victor Sonnenberg

Journal of Integrated Circuits and Systems v. 12, n. 2, p.101-106, Aug 2016

2016

Acesso online

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Deste Autor:

  1. Martino, J
  2. Simoen, E
  3. Agopian, P
  4. Claeys, C
  5. Rooyackers, R

Neste Assunto:

  1. Semicondutores
  2. Transistores
  3. Microeletrônica
  4. Circuitos Integrados
  5. Silício

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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