Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVDBai, J. ; Wang, T. ; Li, H.D. ; Jiang, N. ; Sakai, S.Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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(0 0 l)-oriented Bi 2Sr 2Co 2O y and Ca 3Co 4O 9 films: Self-assembly orientation and growth mechanism by chemical solution depositionZhu, Xuebin ; Shi, Dongqi ; Dou, Shixue ; Sun, Yuping ; Li, Qi ; Wang, Lin ; Li, Wenxian ; Yeoh, Weikong ; Zheng, Rongkun ; Chen, Zhixin ; Kong, ChunxiuActa materialia, 2010, Vol.58 (12), p.4281-4291 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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3 |
Material Type: Artigo
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0.025-inch vs 0.035-inch guide wires for wire-guidedcannulation during endoscopic retrograde cholangiopancreatography: A randomized study世界胃肠病学杂志:英文版(电子版), 2015 (30), p.9182-9188Texto completo disponível |
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4 |
Material Type: Artigo
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0.1 μm AlGaAs/InGaAs high electron mobility transistor fabrication by the new method of thinned resist pattern reversed by metalTanabe, M. ; Matsuno, T. ; Kashiwagi, N. ; Sakai, H. ; Inoue, K. ; Tamura, A.Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996-09, Vol.14 (5), p.3248-3251Sem texto completo |
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5 |
Material Type: Artigo
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0.10 μm TiSi 2 technology utilizing nitrogen diffusion controlled RTAMatsubara, Y. ; Sakai, T. ; Ishigami, T. ; Ando, K. ; Horiuchi, T.Thin solid films, 1995, Vol.270 (1), p.537-543 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTAMATSUBARA, Y ; SAKAI, T ; ISHIGAMI, T ; ANDO, K ; HORIUCHI, TThin solid films, 1995-12, Vol.270 (1-2), p.537-543 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
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7 |
Material Type: Artigo
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0.15-μm n-n gate CMOS technology with channel selective epitaxy and transient enhanced diffusion suppressionAbiko, Hitoshi ; Ono, Atsuki ; Ueno, Ryuuichi ; Masuoka, Sadaaki ; Shishiguchi, Seiichi ; Nakajima, Ken ; Sakai, IsamiElectronics & communications in Japan. Part 2, Electronics, 1996, Vol.79 (11), p.28-35 [Periódico revisado por pares]New York: Wiley Subscription Services, Inc., A Wiley CompanyTexto completo disponível |
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8 |
Material Type: Artigo
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0.18-μm Nondestructive readout FeRAM using charge compensation techniqueKATO, Yoshihisa ; YAMADA, Takayoshi ; SHIMADA, YasuhiroIEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2616-2621 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
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9 |
Material Type: Artigo
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0.1満点地震観測による,地殻活動の可視化にむけて松本, 聡 ; 飯尾, 能久 ; 酒井, 慎一 ; 加藤, 愛太郎可視化情報学会誌, 2018, Vol.38(149), pp.7-10社団法人 可視化情報学会Sem texto completo |
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10 |
Material Type: Artigo
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0.2-Hz repetitive transcranial magnetic stimulation has no add-on effects as compared to a realistic sham stimulation in Parkinson's diseaseOkabe, Shingo ; Ugawa, Yoshikazu ; Kanazawa, IchiroMovement disorders, 2003-04, Vol.18 (4), p.382-388 [Periódico revisado por pares]New York: Wiley Subscription Services, Inc., A Wiley CompanyTexto completo disponível |