Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Point defects in silicon carbide as a promising basis for spectroscopy of single defects with controllable quantum states at room temperatureSoltamov, V. A. ; Tolmachev, D. O. ; Il’in, I. V. ; Astakhov, G. V. ; Dyakonov, V. V. ; Soltamova, A. A. ; Baranov, P. G.Physics of the solid state, 2015-05, Vol.57 (5), p.891-899 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
|
2 |
Material Type: Artigo
|
Structural transformation of macroporous silicon anodes as a result of cyclic lithiation processesLi, G. V. ; Kulova, T. L. ; Tolmachev, V. A. ; Chernienko, A. V. ; Baranov, M. A. ; Pavlov, S. I. ; Astrova, E. V. ; Skundin, A. M.Semiconductors (Woodbury, N.Y.), 2013-09, Vol.47 (9), p.1275-1281 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
|
3 |
Material Type: Artigo
|
Crystalline complexes of fullerene with anisole derivativesMarkin, G. V. ; Baranov, E. V. ; Ketkov, S. Yu ; Lopatin, M. A. ; Kuropatov, V. A. ; Shavyrin, A. S. ; Domrachev, G. A.Physics of the solid state, 2012-03, Vol.54 (3), p.647-651 [Periódico revisado por pares]Dordrecht: SP MAIK Nauka/InterperiodicaTexto completo disponível |
|
4 |
Material Type: Artigo
|
Modeling of the fuel burnup of research reactors on switching to low enrichmentBaranov, V. G. ; Tikhomirov, G. V. ; Kharitonov, P. E. ; Khlunov, A. V.Atomic energy (New York, N.Y.), 2010-05, Vol.108 (1), p.40-45 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
|
5 |
Material Type: Artigo
|
Certain characteristics of direct-charge detectorsBaranov, V. F. ; Ivanov, V. I. ; Kulakov, G. V. ; Makhaneva, G. I.Meas. Tech. (USSR) (Engl. Transl.), v. 16, no. 2, pp. 250-253, 1973-02, Vol.16 (2), p.250-253 [Periódico revisado por pares]Texto completo disponível |