Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
![]() |
Time dependent dielectric breakdown physics – Models revisitedMcPherson, J.W.Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.1753-1760 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
2 |
Material Type: Artigo
|
![]() |
A Comparative Study of Different Physics-Based NBTI ModelsMahapatra, S. ; Goel, N. ; Desai, S. ; Gupta, S. ; Jose, B. ; Mukhopadhyay, S. ; Joshi, K. ; Jain, A. ; Islam, A. E. ; Alam, M. A.IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.901-916 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
3 |
Material Type: Artigo
|
![]() |
Randomly spread CDMA: asymptotics via statistical physicsDongning Guo ; Verdu, S.IEEE transactions on information theory, 2005-06, Vol.51 (6), p.1983-2010 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
4 |
Material Type: Artigo
|
![]() |
A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devicesKhandelwal, Sourabh ; Fjeldly, T.A.Solid-state electronics, 2012-10, Vol.76, p.60-66 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
5 |
Material Type: Artigo
|
![]() |
A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC OperationsHuang, Peng ; Liu, Xiao Yan ; Chen, Bing ; Li, Hai Tong ; Wang, Yi Jiao ; Deng, Ye Xin ; Wei, Kang Liang ; Zeng, Lang ; Gao, Bin ; Du, Gang ; Zhang, Xing ; Kang, Jin FengIEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4090-4097 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
6 |
Material Type: Artigo
|
![]() |
Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells-Part II: Physics-Based ModelingLavizzari, S. ; Ielmini, D. ; Sharma, D. ; Lacaita, A.L.IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.1078-1085 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
7 |
Material Type: Artigo
|
![]() |
A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT DevicesKhandelwal, S. ; Goyal, N. ; Fjeldly, T. A.IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3622-3625 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
8 |
Material Type: Artigo
|
![]() |
Physics-Based Modeling of GaN HEMTsVitanov, S. ; Palankovski, V. ; Maroldt, S. ; Quay, R. ; Murad, S. ; Rodle, T. ; Selberherr, S.IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.685-693 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
9 |
Material Type: Artigo
|
![]() |
Transport Physics and Device Modeling of Zinc Oxide Thin-Film Transistors-Part II: Contact Resistance in Short Channel DevicesTorricelli, F. ; Smits, E. C. P. ; Meijboom, J. R. ; Tripathi, A. K. ; Gelinck, G. H. ; Colalongo, L. ; Kovacs-Vajna, Z. M. ; de Leeuw, Dago M. ; Cantatore, E.IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3025-3033 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
10 |
Material Type: Artigo
|
![]() |
Physics-Based SPICE-Compatible Compact Model for Simulating Hybrid MTJ/CMOS CircuitsPanagopoulos, Georgios D. ; Augustine, Charles ; Roy, KaushikIEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2808-2814 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |