Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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First-principles study of physisorption of nucleic acid bases on small-diameter carbon nanotubesGowtham, S ; Scheicher, Ralph H ; Pandey, Ravindra ; Karna, Shashi P ; Ahuja, RajeevNanotechnology, 2008-03, Vol.19 (12), p.125701-125701 (6) [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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2 |
Material Type: Artigo
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Excited state and charge-carrier dynamics in perovskite solar cell materialsPonseca, Carlito S ; Tian, Yuxi ; Sundström, Villy ; Scheblykin, Ivan GNanotechnology, 2016-02, Vol.27 (8), p.082001-082001 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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3 |
Material Type: Artigo
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Study of carrier concentration in single InP nanowires by luminescence and Hall measurementsLindgren, David ; Hultin, Olof ; Heurlin, Magnus ; Storm, Kristian ; Borgström, Magnus T ; Samuelson, Lars ; Gustafsson, AndersNanotechnology, 2015-01, Vol.26 (4), p.045705-045705 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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4 |
Material Type: Artigo
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Polarity dependent strongly inhomogeneous In-incorporation in GaN nanocolumnsOppo, C I ; Malindretos, J ; Zamani, R R ; Broxtermann, D ; Segura-Ruiz, J ; Martinez-Criado, G ; Ricci, P C ; Rizzi, ANanotechnology, 2016-09, Vol.27 (35), p.355703-355703 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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5 |
Material Type: Artigo
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Doping evaluation of InP nanowires for tandem junction solar cellsLindelöw, F ; Heurlin, M ; Otnes, G ; Dagyt, V ; Lindgren, D ; Hultin, O ; Storm, K ; Samuelson, L ; Borgström, MNanotechnology, 2016-02, Vol.27 (6), p.065706-065706 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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6 |
Material Type: Artigo
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Sn-seeded GaAs nanowires grown by MOVPESun, Rong ; Vainorius, Neimantas ; Jacobsson, Daniel ; Pistol, Mats-Erik ; Lehmann, Sebastian ; Dick, Kimberly ANanotechnology, 2016-05, Vol.27 (21), p.215603-215603 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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7 |
Material Type: Artigo
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Demonstration of Sn-seeded GaSb homo- and GaAs-GaSb heterostructural nanowiresTornberg, Marcus ; Mårtensson, Erik K ; Zamani, Reza R ; Lehmann, Sebastian ; Dick, Kimberly A ; Ghalamestani, Sepideh GorjiNanotechnology, 2016-04, Vol.27 (17), p.175602-175602 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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8 |
Material Type: Artigo
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Probe of local impurity states by bend resistance measurements in graphene cross junctionsDu, J ; Li, J Y ; Kang, N ; Lin, Li ; Peng, Hailin ; Liu, Zhongfan ; Xu, H QNanotechnology, 2016-06, Vol.27 (24), p.245204-245204 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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9 |
Material Type: Artigo
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Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensemblesIqbal, Azhar ; Beech, Jason P ; Anttu, Nicklas ; Pistol, Mats-Erik ; Samuelson, Lars ; Borgström, Magnus T ; Yartsev, ArkadyNanotechnology, 2013-03, Vol.24 (11), p.115706-1-8 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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10 |
Material Type: Artigo
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Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowiresLindgren, David ; Kawaguchi, Kenichi ; Heurlin, Magnus ; Borgström, Magnus T ; Pistol, Mats-Erik ; Samuelson, Lars ; Gustafsson, AndersNanotechnology, 2013-06, Vol.24 (22), p.225203-225203 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |