Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
NEAR-BAND-GAP PHOTOLUMINESCENCE FROM PSEUDOMORPHIC SI1-XGEX SINGLE LAYERS ON SILICONROBBINS, DJ ; CANHAM, LT ; BARNETT, SJ ; PITT, AD ; CALCOTT, PJournal of applied physics, 1992-02, Vol.71 (3), p.1407-1414 [Periódico revisado por pares]WOODBURY: Amer Inst PhysicsTexto completo disponível |
|
2 |
Material Type: Artigo
|
Observation of a many-body edge singularity in quantum-well luminescence spectraSKOLNICK, M. S ; RORISON, J. M ; NASH, K. J ; MOWBRAY, D. J ; TAPSTER, P. R ; BASS, S. J ; PITT, A. DPhysical review letters, 1987-05, Vol.58 (20), p.2130-2133 [Periódico revisado por pares]Ridge, NY: American Physical SocietyTexto completo disponível |
|
3 |
Material Type: Artigo
|
On the Sharp Markov Property for Gaussian Random Fields and Spectral Synthesis in Spaces of Bessel PotentialsPitt, Loren D. ; Robeva, Raina S.The Annals of probability, 2003-07, Vol.31 (3), p.1338-1376 [Periódico revisado por pares]Hayward, CA: Institute of Mathematical StatisticsTexto completo disponível |
|
4 |
Material Type: Artigo
|
Spectroscopic ellipsometry characterization of strained and relaxed Si1-xGex epitaxial layersPICKERING, C ; CARLINE, R. T ; ROBBINS, D. J ; LEONG, W. Y ; BARNETT, S. J ; PITT, A. D ; CULLIS, A. GJournal of applied physics, 1993, Vol.73 (1), p.239-250 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
|
5 |
Material Type: Ata de Congresso
|
Wind tunnel demonstration of the SAMPSON Smart InletPitt, Dale M ; Dunne, James P ; White, Edward V ; Garcia, EphrahimSPIE proceedings series, 2001, Vol.4332, p.345-356Bellingham WA: SPIETexto completo disponível |
|
6 |
Material Type: Artigo
|
Metal Organic CVD of Cobalt Thin Films Using Cobalt Tricarbonyl NitrosylLane, Penelope A. ; E.Oliver, Peter ; Wright, Peter J. ; Reeves, Christopher L. ; Pitt, Anthony D. ; Cockayne, BrianChemical vapor deposition, 1998-10, Vol.4 (5), p.183-186 [Periódico revisado por pares]Weinheim: WILEY-VCH Verlag GmbHTexto completo disponível |
|
7 |
Material Type: Artigo
|
Investigation of InGaAs-InP quantum wells by optical spectroscopySkolnick, M S ; Tapster, P R ; Bass, S J ; Pitt, A D ; Apsley, N ; Aldred, S PSemiconductor science and technology, 1986-07, Vol.1 (1), p.29-40 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
|
8 |
Material Type: Artigo
|
Raman, infrared, photoluminescence and theoretical studies of the II-VI-VI ternary CdSeTeFeng, Z.C. ; Becla, P. ; Kim, L.S. ; Perkowitz, S. ; Feng, Y.P. ; Poon, H.C. ; Williams, K.P. ; Pitt, G.D.Journal of crystal growth, 1994-04, Vol.138 (1), p.239-243 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
|
9 |
Material Type: Artigo
|
X-ray diffraction determination of a semiconductor epilayer unit cell oriented and distorted arbitrarilyUsher, B F ; Smith, G W ; Barnett, S J ; Keir, A M ; Pitt, A DJournal of physics. D, Applied physics, 1993-04, Vol.26 (4A), p.A181-A187 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
|
10 |
Material Type: Artigo
|
Photoinduced quenching of infrared absorption nonuniformities of large diameter GaAs crystalsSKOLNICK, M. S ; REED, L. J ; PITT, A. DApplied physics letters, 1984-02, Vol.44 (4), p.447-449 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |