Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxyDiNezza, Michael J. ; Zhao, Xin-Hao ; Liu, Shi ; Kirk, Alexander P. ; Zhang, Yong-HangApplied physics letters, 2013-11, Vol.103 (19) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowiresLoitsch, Bernhard ; Jeon, Nari ; Döblinger, Markus ; Winnerl, Julia ; Parzinger, Eric ; Matich, Sonja ; Wurstbauer, Ursula ; Riedl, Hubert ; Abstreiter, Gerhard ; Finley, Jonathan J. ; Lauhon, Lincoln J. ; Koblmüller, GregorApplied physics letters, 2016-08, Vol.109 (9) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Electron spin relaxation time in (110) InGaAs/InAlAs quantum wellsYokota, Nobuhide ; Yasuda, Yusuke ; Ikeda, Kazuhiro ; Kawaguchi, HitoshiJournal of applied physics, 2014-07, Vol.116 (2) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopyKauko, H. ; Zheng, C. L. ; Zhu, Y. ; Glanvill, S. ; Dwyer, C. ; Munshi, A. M. ; Fimland, B. O. ; van Helvoort, A. T. J. ; Etheridge, J.Applied physics letters, 2013-12, Vol.103 (23) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructuresFan, Dongsheng ; Zeng, Zhaoquan ; Hu, Xian ; Dorogan, Vitaliy G. ; Li, Chen ; Benamara, Mourad ; Hawkridge, Michael E. ; Mazur, Yuriy I. ; Yu, Shui-Qing ; Johnson, Shane R. ; Wang, Zhiming M. ; Salamo, Gregory J.Applied physics letters, 2012-10, Vol.101 (18) [Periódico revisado por pares]United StatesTexto completo disponível |
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6 |
Material Type: Artigo
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Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wellsYokota, Nobuhide ; Aoshima, Yohei ; Ikeda, Kazuhiro ; Kawaguchi, HitoshiApplied physics letters, 2014-02, Vol.104 (7) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Few-hole double quantum dot in an undoped GaAs/AlGaAs heterostructureTracy, L. A. ; Hargett, T. W. ; Reno, J. L.Applied physics letters, 2014-03, Vol.104 (12) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illuminationKawazu, Takuya ; Noda, Takeshi ; Sakuma, Yoshiki ; Sakaki, HiroyukiApplied physics letters, 2015-01, Vol.106 (2) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Enhancement of Rashba interaction in GaAs/AlGaAs quantum wells due to the incorporation of bismuthSimmons, R. A. ; Jin, S. R. ; Sweeney, S. J. ; Clowes, S. K.Applied physics letters, 2015-10, Vol.107 (14) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasersWei, Wei ; Liu, Yange ; Zhang, Xia ; Wang, Zhi ; Ren, XiaominApplied physics letters, 2014-06, Vol.104 (22) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |