Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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High-efficiency, one-sun (22.3% at air mass 0; 23.9% at air mass 1.5) monolithic two-junction cascade solar cell grown by metalorganic vapor phase epitaxyCHUNG, B.-C ; VIRSHUP, G. F ; WERTHEN, J. GApplied physics letters, 1988-05, Vol.52 (22), p.1889-1891 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Extremely wide modulation bandwidth in a low threshold current strained quantum well laserSUEMUNE, I ; COLDREN, L. A ; YAMANISHI, M ; KAN, YApplied physics letters, 1988-10, Vol.53 (15), p.1378-1383 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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A 19 % efficient AlGaAs solar cell with graded band gapVIRSHUP, G. F ; FORD, C. W ; WERTHEN, J. GApplied physics letters, 1985-12, Vol.47 (12), p.1319-1321 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Coherent addition of AlGaAs lasers using microlenses and diffractive couplingLEGER, J. R ; SCOTT, M. L ; VELDKAMP, W. BApplied physics letters, 1988-05, Vol.52 (21), p.1771-1773 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Spatial resolution and nature of defects produced by low-energy proton irradiation of GaAs solar cellsKachare, R. ; Anspaugh, B. E.Applied physics letters, 1986-11, Vol.49 (21), p.1459-1461 [Periódico revisado por pares]Legacy CDMS: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Subpicosecond gain dynamics in GaAlAs laser diodesKESLER, M. P ; IPPEN, E. PApplied physics letters, 1987-11, Vol.51 (22), p.1765-1767 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Lateral mode control of an AlGaAs laser array in a Talbot cavityLeger, James R.Applied physics letters, 1989-07, Vol.55 (4), p.334-336 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Artigo
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Graded band-gap p/n AlGaAs solar cells grown by organometallic vapor phase epitaxyWAGNER, D. K ; SHEALY, J. RApplied physics letters, 1984-07, Vol.45 (2), p.162-164 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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High-power, diffraction-limited-beam operation from phase-locked diode-laser arrays of closely spaced leaky waveguides (antiguides)BOTEZ, D ; MAWST, L ; HAYASHIDA, P ; PETERSON, G ; ROTH, T. JApplied physics letters, 1988-08, Vol.53 (6), p.464-466 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctionsGLEMBOCKI, O. J ; SHANABROOK, B. V ; BOTTKA, N ; BEARD, W. T ; COMAS, JApplied physics letters, 1985-05, Vol.46 (10), p.970-972 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |