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Refinado por: Nome da Publicação: Appl. Phys. Lett.; remover nível superior: Recursos Online remover
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1
High-efficiency, one-sun (22.3% at air mass 0; 23.9% at air mass 1.5) monolithic two-junction cascade solar cell grown by metalorganic vapor phase epitaxy
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High-efficiency, one-sun (22.3% at air mass 0; 23.9% at air mass 1.5) monolithic two-junction cascade solar cell grown by metalorganic vapor phase epitaxy

CHUNG, B.-C ; VIRSHUP, G. F ; WERTHEN, J. G

Applied physics letters, 1988-05, Vol.52 (22), p.1889-1891 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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2
Extremely wide modulation bandwidth in a low threshold current strained quantum well laser
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Extremely wide modulation bandwidth in a low threshold current strained quantum well laser

SUEMUNE, I ; COLDREN, L. A ; YAMANISHI, M ; KAN, Y

Applied physics letters, 1988-10, Vol.53 (15), p.1378-1383 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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3
A 19 % efficient AlGaAs solar cell with graded band gap
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A 19 % efficient AlGaAs solar cell with graded band gap

VIRSHUP, G. F ; FORD, C. W ; WERTHEN, J. G

Applied physics letters, 1985-12, Vol.47 (12), p.1319-1321 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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4
Coherent addition of AlGaAs lasers using microlenses and diffractive coupling
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Coherent addition of AlGaAs lasers using microlenses and diffractive coupling

LEGER, J. R ; SCOTT, M. L ; VELDKAMP, W. B

Applied physics letters, 1988-05, Vol.52 (21), p.1771-1773 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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5
Spatial resolution and nature of defects produced by low-energy proton irradiation of GaAs solar cells
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Spatial resolution and nature of defects produced by low-energy proton irradiation of GaAs solar cells

Kachare, R. ; Anspaugh, B. E.

Applied physics letters, 1986-11, Vol.49 (21), p.1459-1461 [Periódico revisado por pares]

Legacy CDMS: American Institute of Physics

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6
Subpicosecond gain dynamics in GaAlAs laser diodes
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Subpicosecond gain dynamics in GaAlAs laser diodes

KESLER, M. P ; IPPEN, E. P

Applied physics letters, 1987-11, Vol.51 (22), p.1765-1767 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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7
Lateral mode control of an AlGaAs laser array in a Talbot cavity
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Lateral mode control of an AlGaAs laser array in a Talbot cavity

Leger, James R.

Applied physics letters, 1989-07, Vol.55 (4), p.334-336 [Periódico revisado por pares]

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8
Graded band-gap p/n AlGaAs solar cells grown by organometallic vapor phase epitaxy
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Graded band-gap p/n AlGaAs solar cells grown by organometallic vapor phase epitaxy

WAGNER, D. K ; SHEALY, J. R

Applied physics letters, 1984-07, Vol.45 (2), p.162-164 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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9
High-power, diffraction-limited-beam operation from phase-locked diode-laser arrays of closely spaced leaky waveguides (antiguides)
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High-power, diffraction-limited-beam operation from phase-locked diode-laser arrays of closely spaced leaky waveguides (antiguides)

BOTEZ, D ; MAWST, L ; HAYASHIDA, P ; PETERSON, G ; ROTH, T. J

Applied physics letters, 1988-08, Vol.53 (6), p.464-466 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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10
Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions
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Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions

GLEMBOCKI, O. J ; SHANABROOK, B. V ; BOTTKA, N ; BEARD, W. T ; COMAS, J

Applied physics letters, 1985-05, Vol.46 (10), p.970-972 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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