Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Non-linear pH responses of passivated graphene-based field-effect transistorsFuhr, Nicholas E. ; Azize, Mohamed ; Bishop, David J.Journal of applied physics, 2023-09, Vol.134 (10) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Surface and interface effects on the current–voltage characteristic curves of multiwall carbon nanotube-Si hybrid junctions selectively probed through exposure to HF vapors and ppm-NO2Freddi, Sonia ; Casotto, Andrea ; Drera, Giovanni ; Tognazzi, Andrea ; Freddi, Tiziano ; Pagliara, Stefania ; De Nicola, Francesco ; Castrucci, Paola ; Sangaletti, LuigiJournal of applied physics, 2021-02, Vol.129 (5) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Chemical, electronic, and magnetic structure of LaFeCoSi alloy: Surface and bulk propertiesLollobrigida, V. ; Basso, V. ; Borgatti, F. ; Torelli, P. ; Kuepferling, M. ; Coïsson, M. ; Olivetti, E. S. ; Celegato, F. ; Tortora, L. ; Stefani, G. ; Panaccione, G. ; Offi, F.Journal of applied physics, 2014-05, Vol.115 (20) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Structural and chemical analysis of ion beam produced conductive regions on highly resistive organic filmsVENKATESAN, T ; FORREST, S. R ; KAPLAN, M. L ; SCHMIDT, P. H ; MURRAY, C. A ; BROWN, W. L ; WILKENS, B. J ; ROBERTS, R. F ; RUPP, L. JR ; SCHONHORN, HJ. Appl. Phys.; (United States), 1984-11, Vol.56 (10), p.2778-2787 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Precise characterization of the Raman nonlinearity in benzene using nonlinear interferometryOwyoung, Adelbert ; Peercy, P. S.J. Appl. Phys.; (United States), 1977-02, Vol.48 (2), p.674-677 [Periódico revisado por pares]United StatesTexto completo disponível |
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6 |
Material Type: Artigo
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Microstructure and dielectric properties of (Nb + In) co-doped rutile TiO2 ceramicsLi, Jinglei ; Li, Fei ; Zhuang, Yongyong ; Jin, Li ; Wang, Linghang ; Wei, Xiaoyong ; Xu, Zhuo ; Zhang, ShujunJournal of applied physics, 2014-08, Vol.116 (7) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Mg-doping and free-hole properties of hot-wall MOCVD GaNPapamichail, A. ; Kakanakova-Georgieva, A. ; Sveinbjörnsson, E. Ö. ; Persson, A. R. ; Hult, B. ; Rorsman, N. ; Stanishev, V. ; Le, S. P. ; Persson, P. O. Å. ; Nawaz, M. ; Chen, J. T. ; Paskov, P. P. ; Darakchieva, V.Journal of applied physics, 2022-05, Vol.131 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical propertiesUddin, M. R. ; Majety, S. ; Li, J. ; Lin, J. Y. ; Jiang, H. X.Journal of applied physics, 2014-03, Vol.115 (9) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealingMeyers, V. ; Rocco, E. ; Hogan, K. ; McEwen, B. ; Shevelev, M. ; Sklyar, V. ; Jones, K. ; Derenge, M. ; Shahedipour-Sandvik, F.Journal of applied physics, 2021-08, Vol.130 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Direct measurement of the density and energy level of compensating acceptors and their impact on the conductivity of n-type Ga2O3 filmsIslam, Md Minhazul ; Adhikari, Naresh ; Hernandez, Armando ; Janover, Adam ; Novak, Steven ; Agarwal, Sahil ; Codding, Charles L. ; Snure, Michael ; Huang, Mengbing ; Selim, Farida A.Journal of applied physics, 2020-04, Vol.127 (14) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |