Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Thermal diffusion boron doping of single-crystal natural diamondSeo, Jung-Hun ; Wu, Henry ; Mikael, Solomon ; Mi, Hongyi ; Blanchard, James P. ; Venkataramanan, Giri ; Zhou, Weidong ; Gong, Shaoqin ; Morgan, Dane ; Ma, ZhenqiangJournal of applied physics, 2016-05, Vol.119 (20) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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A method to determine the pressure and densities of gas stored in blisters: Application to H and He sequential ion implantation in siliconDaghbouj, N. ; Cherkashin, N. ; Claverie, A.Microelectronic engineering, 2018-04, Vol.190, p.54-56 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Reduction in thermal boundary conductance due to proton implantation in silicon and sapphireHopkins, Patrick E. ; Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904 ; Hattar, Khalid ; Beechem, Thomas ; Ihlefeld, Jon F. ; Piekos, Edward S. ; Medlin, Douglas L.Applied physics letters, 2011-06, Vol.98 (23) [Periódico revisado por pares]United StatesTexto completo disponível |
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4 |
Material Type: Artigo
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Relative free energies of Si surfacesFollstaedt, D. M.Applied physics letters, 1993-03, Vol.62 (10), p.1116-1118 [Periódico revisado por pares]United StatesTexto completo disponível |
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5 |
Material Type: Artigo
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THERMODYNAMIC PROPERTIES OF AMORPHOUS-SILICON INVESTIGATED BY PULSED LASER-HEATINGGRIMALDI, MG ; BAERI, P ; MALVEZZI, MA ; SIRTORI, CInternational Journal of Thermophysics; (United States), 1992-01, Vol.13 (1), p.141-151 [Periódico revisado por pares]NEW YORK: PLENUM PUBL CORPTexto completo disponível |
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6 |
Material Type: Artigo
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Damage saturation during high-energy ion implantation of Si[sub 1[minus][ital x]]Ge[sub [ital x]]Holland, O.W. ; Haynes, T.E.Applied physics letters, 1992-12, Vol.61:26 [Periódico revisado por pares]United StatesTexto completo disponível |
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7 |
Material Type: Artigo
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Epitaxial growth of beta-SiC on TiC[sub x] by reactive evaporationParsons, J.D. ; Bunshah, R.F. ; Stafsudd, O.M.Journal of the Electrochemical Society, 1993-06, Vol.140:6 [Periódico revisado por pares]United StatesTexto completo disponível |
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8 |
Material Type: Artigo
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Pulsed-laser melting of amorphous silicon: time-resolved measurements and model calculationsLOWNDES, D. H ; WOOD, R. F ; NARAYAN, JPhys. Rev. Lett.; (United States), 1984-02, Vol.52 (7), p.561-564 [Periódico revisado por pares]Ridge, NY: American Physical SocietyTexto completo disponível |
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9 |
Material Type: Artigo
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Evolution of the electron acoustic signal as function of doping level in III-V semiconductorsBRESSE, J. F ; PAPADOPOULO, A. CJ. Appl. Phys.; (United States), 1988-07, Vol.64 (1), p.98-102 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Experiments of the superconducting proximity effect between superconductor and semiconductorHATANO, M ; NISHINO, T ; KAWABE, UAppl. Phys. Lett.; (United States), 1987-01, Vol.50 (1), p.52-54 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |