Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Silicon CMOS architecture for a spin-based quantum computerVeldhorst, M ; Eenink, H G J ; Yang, C H ; Dzurak, A SNature communications, 2017-12, Vol.8 (1), p.1766-8, Article 1766 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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2 |
Material Type: Artigo
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Operation of a silicon quantum processor unit cell above one kelvinYang, C H ; Leon, R C C ; Hwang, J C C ; Saraiva, A ; Tanttu, T ; Huang, W ; Camirand Lemyre, J ; Chan, K W ; Tan, K Y ; Hudson, F E ; Itoh, K M ; Morello, A ; Pioro-Ladrière, M ; Laucht, A ; Dzurak, A SNature (London), 2020-04, Vol.580 (7803), p.350-354 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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3 |
Material Type: Artigo
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Interfacing spin qubits in quantum dots and donors—hot, dense, and coherentVandersypen, L. M. K. ; Bluhm, H. ; Clarke, J. S. ; Dzurak, A. S. ; Ishihara, R. ; Morello, A. ; Reilly, D. J. ; Schreiber, L. R. ; Veldhorst, M.npj quantum information, 2017-09, Vol.3 (1), p.1-10, Article 34 [Periódico revisado por pares]London: Nature Publishing GroupTexto completo disponível |
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4 |
Material Type: Artigo
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Coherent spin qubit transport in siliconYoneda, J. ; Huang, W. ; Feng, M. ; Yang, C. H. ; Chan, K. W. ; Tanttu, T. ; Gilbert, W. ; Leon, R. C. C. ; Hudson, F. E. ; Itoh, K. M. ; Morello, A. ; Bartlett, S. D. ; Laucht, A. ; Saraiva, A. ; Dzurak, A. S.Nature communications, 2021-07, Vol.12 (1), p.4114-4114, Article 4114 [Periódico revisado por pares]London: Nature Publishing GroupTexto completo disponível |
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5 |
Material Type: Artigo
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Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dotLiles, S D ; Li, R ; Yang, C H ; Hudson, F E ; Veldhorst, M ; Dzurak, A S ; Hamilton, A RNature communications, 2018-08, Vol.9 (1), p.3255-7, Article 3255 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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6 |
Material Type: Artigo
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Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readoutFogarty, M A ; Chan, K W ; Hensen, B ; Huang, W ; Tanttu, T ; Yang, C H ; Laucht, A ; Veldhorst, M ; Hudson, F E ; Itoh, K M ; Culcer, D ; Ladd, T D ; Morello, A ; Dzurak, A SNature communications, 2018-10, Vol.9 (1), p.4370-8, Article 4370 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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7 |
Material Type: Artigo
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Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dotLeon, R C C ; Yang, C H ; Hwang, J C C ; Lemyre, J Camirand ; Tanttu, T ; Huang, W ; Chan, K W ; Tan, K Y ; Hudson, F E ; Itoh, K M ; Morello, A ; Laucht, A ; Pioro-Ladrière, M ; Saraiva, A ; Dzurak, A SNature communications, 2020-02, Vol.11 (1), p.797-797, Article 797 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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8 |
Material Type: Artigo
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Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarkingMuhonen, J T ; Laucht, A ; Simmons, S ; Dehollain, J P ; Kalra, R ; Hudson, F E ; Freer, S ; Itoh, K M ; Jamieson, D N ; McCallum, J C ; Dzurak, A S ; Morello, AJournal of physics. Condensed matter, 2015-04, Vol.27 (15), p.154205-154205 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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9 |
Material Type: Artigo
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Single-spin qubits in isotopically enriched silicon at low magnetic fieldZhao, R ; Tanttu, T ; Tan, K Y ; Hensen, B ; Chan, K W ; Hwang, J C C ; Leon, R C C ; Yang, C H ; Gilbert, W ; Hudson, F E ; Itoh, K M ; Kiselev, A A ; Ladd, T D ; Morello, A ; Laucht, A ; Dzurak, A SNature communications, 2019-12, Vol.10 (1), p.5500-9, Article 5500 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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10 |
Material Type: Artigo
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Spin-orbit coupling and operation of multivalley spin qubitsVeldhorst, M. ; Ruskov, R. ; Yang, C. H. ; Hwang, J. C. C. ; Hudson, F. E. ; Flatté, M. E. ; Tahan, C. ; Itoh, K. M. ; Morello, A. ; Dzurak, A. S.Physical review. B, 2015-11, Vol.92 (20), Article 201401 [Periódico revisado por pares]Texto completo disponível |