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Refinado por: Nome da Publicação: Journal of Applied Physics remover Base de dados/Biblioteca: Science Citation Index Expanded (Web of Science) remover
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1
Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence
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Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence

Mukherjee, Kunal ; Norman, Andrew G. ; Akey, Austin J. ; Buonassisi, Tonio ; Fitzgerald, Eugene A.

Journal of applied physics, 2015-09, Vol.118 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP
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Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP

France, R. M. ; McMahon, W. E. ; Norman, A. G. ; Geisz, J. F. ; Romero, M. J.

Journal of Applied Physics, 2012-07, Vol.112 (2) [Periódico revisado por pares]

United States

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3
Ordering-enhanced dislocation glide in III-V alloys
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Ordering-enhanced dislocation glide in III-V alloys

McMahon, William E. ; Kang, Joongoo ; France, Ryan M. ; Norman, Andrew G. ; Friedman, Daniel J. ; Wei, Su-Huai

Journal of applied physics, 2013-11, Vol.114 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Dielectric function spectra and critical-point energies of Cu2ZnSnSe4 from 0.5 to 9.0 eV
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Dielectric function spectra and critical-point energies of Cu2ZnSnSe4 from 0.5 to 9.0 eV

Choi, S. G. ; Zhao, H. Y. ; Persson, C. ; Perkins, C. L. ; Donohue, A. L. ; To, B. ; Norman, A. G. ; Li, J. ; Repins, I. L.

Journal of applied physics, 2012-02, Vol.111 (3), p.033506 [Periódico revisado por pares]

United States

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5
Atomic ordering-induced band gap reductions in GaAsSb epilayers grown by molecular beam epitaxy
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Atomic ordering-induced band gap reductions in GaAsSb epilayers grown by molecular beam epitaxy

Gorman, B P ; Norman, A G ; Lukic-Zrnic, R ; Littler, C L ; Moutinho, H R ; Golding, T D ; Birdwell, A G

Journal of applied physics, 2005-03, Vol.97 (6), p.063701-063701-7 [Periódico revisado por pares]

American Institute of Physics

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6
Temperature dependence of the band gap of GaAsSb epilayers
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Temperature dependence of the band gap of GaAsSb epilayers

Lukic-Zrnic, R. ; Gorman, B. P. ; Cottier, R. J. ; Golding, T. D. ; Littler, C. L. ; Norman, A. G.

Journal of applied physics, 2002-12, Vol.92 (11), p.6939-6941 [Periódico revisado por pares]

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7
Laterally modulated composition profiles in AlAs/InAs short-period superlattices
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Laterally modulated composition profiles in AlAs/InAs short-period superlattices

Ahrenkiel, S. P. ; Norman, A. G. ; Al-Jassim, M. M. ; Mascarenhas, A. ; Mirecki-Millunchick, J. ; Twesten, R. D. ; Lee, S. R. ; Follstaedt, D. M. ; Jones, E. D.

Journal of Applied Physics, 1998-12, Vol.84 (11), p.6088-6094 [Periódico revisado por pares]

United States

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8
Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid-phase epitaxial (001) GaInAsP layers
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Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid-phase epitaxial (001) GaInAsP layers

NORMAN, A. G ; BOOKER, G. R

Journal of applied physics, 1985-01, Vol.57 (10), p.4715-4720 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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9
Atomic ordering and domain structures in metal organic chemical vapor deposition grown InGaAs (001) layers
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Atomic ordering and domain structures in metal organic chemical vapor deposition grown InGaAs (001) layers

Seong, Tae-Yeon ; Norman, A. G. ; Booker, G. R. ; Cullis, A. G.

Journal of applied physics, 1994-06, Vol.75 (12), p.7852-7865 [Periódico revisado por pares]

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10
Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1-y molecular-beam epitaxial layers
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Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1-y molecular-beam epitaxial layers

TAE-YEON SEONG ; NORMAN, A. G ; FERGUSON, I. T ; BOOKER, G. R

Journal of applied physics, 1993-06, Vol.73 (12), p.8227-8236 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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