Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Molecular beam epitaxy of GaAs templates on water soluble NaCl thin filmsMay, Brelon J. ; Kim, Jae Jin ; Walker, Patrick ; Moutinho, Helio R. ; McMahon, William E. ; Ptak, Aaron J. ; Young, David L.Journal of crystal growth, 2022-05, Vol.586, p.126617, Article 126617 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Full wafer property control of local droplet etched GaAs quantum dotsBabin, Hans-Georg ; Bart, Nikolai ; Schmidt, Marcel ; Spitzer, Nikolai ; Wieck, Andreas D. ; Ludwig, ArneJournal of crystal growth, 2022-08, Vol.591, p.126713, Article 126713 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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High efficiency thin film GaInP/GaAs/InGaAs inverted metamorphic (IMM) solar cells based on electroplating processLong, Junhua ; Xiao, Meng ; Huang, Xinping ; Xing, Zhiwei ; Li, Xuefei ; Dai, Pan ; Tan, Ming ; Wu, Yuanyuan ; Song, Minghui ; Lu, ShulongJournal of crystal growth, 2019-05, Vol.513, p.38-42 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Self-assembly of vertically aligned quantum ring-dot structure by Multiple Droplet EpitaxyElborg, Martin ; Noda, Takeshi ; Mano, Takaaki ; Kuroda, Takashi ; Yao, Yuanzhao ; Sakuma, Yoshiki ; Sakoda, KazuakiJournal of crystal growth, 2017-11, Vol.477, p.239-242 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Te doping of GaAs and GaInP using diisopropyl telluride (DIPTe) for tunnel junction applicationsHamon, Gwenaëlle ; Paillet, Nicolas ; Alvarez, José ; Larrue, Alexandre ; Decobert, JeanJournal of crystal growth, 2018-09, Vol.498, p.301-306 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Low areal densities of InAs quantum dots on GaAs(100) prepared by molecular beam epitaxyVerma, A.K. ; Bopp, F. ; Finley, J.J. ; Jonas, B. ; Zrenner, A. ; Reuter, D.Journal of crystal growth, 2022-08, Vol.592, p.126715, Article 126715 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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The investigation of wafer-bonded multi-junction solar cell grown by MBEDai, Pan ; Yang, Wenxian ; Long, Junhua ; Tan, Ming ; Wu, Yuanyuan ; Uchida, Shiro ; Bian, Lifeng ; Lu, ShulongJournal of crystal growth, 2019-06, Vol.515, p.16-20 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Strain relaxation and compositional separation during growth of InGaAs/GaAs(001)Deki, Ryota ; Sasaki, Takuo ; Takahasi, MasamituJournal of crystal growth, 2017-06, Vol.468, p.241-244 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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The optimization of InGaAs/InGaP quantum wells grown by gas source molecular beam epitaxyZhao, Xuyi ; Yu, Wenfu ; Han, Shixian ; Du, Antian ; Lin, Siwei ; Li, Min ; Cao, Chunfang ; Yang, Jin ; Huang, Hua ; Wang, Hailong ; Gong, QianJournal of crystal growth, 2021-10, Vol.572, p.126281, Article 126281 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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X-ray photoelectron spectroscopy study of Ga nanodroplet on silica-terminated silicon surface for nanowire growthFouquat, L. ; Vettori, M. ; Botella, C. ; Benamrouche, A. ; Penuelas, J. ; Grenet, G.Journal of crystal growth, 2019-05, Vol.514, p.83-88 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |