Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Nuclear spin diffusion in the central spin system of a GaAs/AlGaAs quantum dotMillington-Hotze, Peter ; Manna, Santanu ; Covre da Silva, Saimon F ; Rastelli, Armando ; Chekhovich, Evgeny ANature communications, 2023-05, Vol.14 (1), p.2677-2677, Article 2677 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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2 |
Material Type: Artigo
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A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and RecommendationsGamel, Mansur Mohammed Ali ; Lee, Hui Jing ; Rashid, Wan Emilin Suliza Wan Abdul ; Ker, Pin Jern ; Yau, Lau Kuen ; Hannan, Mahammad A. ; Jamaludin, Md. ZainiMaterials, 2021-08, Vol.14 (17), p.4944 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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3 |
Material Type: Artigo
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Photovoltaic Solar Cells: A ReviewAl-Ezzi, Athil S. ; Ansari, Mohamed Nainar M.Applied system innovation, 2022-08, Vol.5 (4), p.67 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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4 |
Material Type: Artigo
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Temperature Sensing Diode in InP-Based Photonic Integration TechnologyTian, Wenjing ; Bas, Bart ; Harmsen, Dylan ; Williams, Kevin ; Leijtens, XaveerIEEE photonics journal, 2024-04, Vol.16 (2), p.1-8 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Real-Time Dynamic 3D Shape Reconstruction with SWIR InGaAs CameraFei, Cheng ; Ma, Yanyang ; Jiang, Shan ; Liu, Junliang ; Sun, Baoqing ; Li, Yongfu ; Gu, Yi ; Zhao, Xian ; Fang, JiaxiongSensors (Basel, Switzerland), 2020-01, Vol.20 (2), p.521 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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6 |
Material Type: Artigo
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Effect of Neutron Irradiation on the Electronic and Optical Properties of AlGaAs/InGaAs-Based Quantum Well StructuresKlochkov, Aleksey N. ; Yskakov, Almas ; Vinichenko, Aleksander N. ; Safonov, Danil A. ; Kargin, Nikolay I. ; Bulavin, Maksim V. ; Galushko, Aleksey V. ; Yamurzin, Vladik R. ; Vasil’evskii, Ivan S.Materials, 2023-10, Vol.16 (20), p.6750 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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7 |
Material Type: Artigo
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Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device ReliabilityKo, Hua-Lun ; Luc, Quang Ho ; Huang, Ping ; Wu, Jing-Yuan ; Chen, Si-Meng ; Tran, Nhan-Ai ; Hsu, Heng-Tung ; Chang, Edward YiIEEE journal of the Electron Devices Society, 2022, Vol.10, p.188-191 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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Diffusion thermopower of a serial double quantum dotThierschmann, H ; Henke, M ; Knorr, J ; Maier, L ; Heyn, C ; Hansen, W ; Buhmann, H ; Molenkamp, L WNew journal of physics, 2013-12, Vol.15 (12), p.123010-8 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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9 |
Material Type: Artigo
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Experimental Detection on Thickness Fluctuation of InxGa1-xAs-Based Indium-Rich Cluster StructureKong, Yanting ; Ma, Rong ; Shen, Bin ; Yu, QingnanIEEE photonics journal, 2022-01, Vol.14 (6), p.1-7 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Quantification of Aluminum Gallium Arsenide (AlGaAs) Wafer Plasma Using Calibration-Free Laser-Induced Breakdown Spectroscopy (CF-LIBS)Alrebdi, Tahani A. ; Fayyaz, Amir ; Asghar, Haroon ; Zaman, Asif ; Asghar, Mamoon ; Alkallas, Fatemah H. ; Hussain, Atif ; Iqbal, Javed ; Khan, WilayatMolecules (Basel, Switzerland), 2022-06, Vol.27 (12), p.3754 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |