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Refinado por: Nome da Publicação: Japanese Journal Of Applied Physics remover
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1
Fabrication and optical characterization of photonic crystal nanocavities with electrodes for gate-defined quantum dots
Fabrication and optical characterization of photonic crystal nanocavities with electrodes for gate-defined quantum dots
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Fabrication and optical characterization of photonic crystal nanocavities with electrodes for gate-defined quantum dots

Tajiri, T. ; Sakai, Y. ; Kuruma, K. ; Ji, S. M. ; Kiyama, H. ; Oiwa, A. ; Ritzmann, J. ; Ludwig, A. ; Wieck, A. D. ; Ota, Y. ; Arakawa, Y. ; Iwamoto, S.

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGI05 [Periódico revisado por pares]

Tokyo: Japanese Journal of Applied Physics

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2
Study on power durability of Ti-containing Al surface acoustic wave electrodes, using interdigitated interdigital transducer filters
Study on power durability of Ti-containing Al surface acoustic wave electrodes, using interdigitated interdigital transducer filters
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Study on power durability of Ti-containing Al surface acoustic wave electrodes, using interdigitated interdigital transducer filters

OTA, Y ; YUHARA, A

Japanese Journal of Applied Physics, 1995, Vol.34 (5B), p.2693-2697 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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3
Time-Dependent Local Potential Induced by Scanning Gate Microscopy
Time-Dependent Local Potential Induced by Scanning Gate Microscopy
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Time-Dependent Local Potential Induced by Scanning Gate Microscopy

Wang, Zhenzhong ; Chen, Dongmin ; Ota, Takeshi ; Fujisawa, Toshimasa

Japanese Journal of Applied Physics, , Vol.48 (4S), p.4 [Periódico revisado por pares]

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4
Ion Implanted Silicon Molecular Beam Epitaxy (I 2 Si MBE)
Ion Implanted Silicon Molecular Beam Epitaxy (I 2 Si MBE)
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Ion Implanted Silicon Molecular Beam Epitaxy (I 2 Si MBE)

Ota, Yusuke

Japanese Journal of Applied Physics, 1980-01, Vol.19 (S1), p.637 [Periódico revisado por pares]

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5
Study on power durability of titanium-containing aluminium surface acoustic wave electrodes, using interdigitated interdigital transducer filters
Study on power durability of titanium-containing aluminium surface acoustic wave electrodes, using interdigitated interdigital transducer filters
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Study on power durability of titanium-containing aluminium surface acoustic wave electrodes, using interdigitated interdigital transducer filters

Ota, Y ; Yuhara, A

Japanese Journal of Applied Physics, 1995-05, Vol.34 (5B), p.2693-2697 [Periódico revisado por pares]

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6
A new perpendicular magnetic film of Co-O evaporation
A new perpendicular magnetic film of Co-O evaporation
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A new perpendicular magnetic film of Co-O evaporation

NAKAMURA, K ; TANI, N ; ISHIKAWA, M ; YAMADA, T ; OTA, Y ; ITOH, A

Japanese Journal of Applied Physics, 1984-06, Vol.23 (6), p.L397-L399 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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7
Ti-added Al electrodes on LiTaO3 36° Y-X substrates for high power surface acoustic wave devices I
Ti-added Al electrodes on LiTaO3 36° Y-X substrates for high power surface acoustic wave devices I
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Ti-added Al electrodes on LiTaO3 36° Y-X substrates for high power surface acoustic wave devices I

OTA, Y ; HOSAKA, N ; YUHARA, A ; YAMADA, J

Japanese journal of applied physics, 1993, Vol.32 (5B), p.2351-2354 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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8
InP MIS Diodes Prepared by Anodic Oxidation
InP MIS Diodes Prepared by Anodic Oxidation
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InP MIS Diodes Prepared by Anodic Oxidation

OTA, Tadahisa ; Horikoshi, Yoshiji

Japanese Journal of Applied Physics, 1979-01, Vol.18 (5), p.989-990 [Periódico revisado por pares]

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9
Low Insertion Loss Surface Acoustic Wave Matched Filter with Low Sidelobe Sequence and Its Application for Spread Spectrum Communication
Low Insertion Loss Surface Acoustic Wave Matched Filter with Low Sidelobe Sequence and Its Application for Spread Spectrum Communication
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Low Insertion Loss Surface Acoustic Wave Matched Filter with Low Sidelobe Sequence and Its Application for Spread Spectrum Communication

Shiba, Takashi ; Yuhara, Akitsuna ; Moteki, Minoru ; Ota, Yasuhiro ; Tamizu, Kazuhide ; Okajima, Daini ; Oda, Kouji ; Tsubouchi, Kazuo

Japanese Journal of Applied Physics, 1996, Vol.35 (Part 1, No. 5B), p.3024-3027 [Periódico revisado por pares]

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10
An Npn AlGaAs/GaAs collector-up HBT with an H+-implanted high resistivity layer under the external p+-GaAs base
An Npn AlGaAs/GaAs collector-up HBT with an H+-implanted high resistivity layer under the external p+-GaAs base
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An Npn AlGaAs/GaAs collector-up HBT with an H+-implanted high resistivity layer under the external p+-GaAs base

YANAGIHARA, M ; OTA, Y ; RYOJI, A ; INADA, M

Japanese Journal of Applied Physics, 1990-12, Vol.29 (12), p.L2174-L2176 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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