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Refinado por: Nome da Publicação: Japanese Journal Of Applied Physics remover assunto: Thin Films remover
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1
Polarization switching behavior of Hf-Zr-O ferroelectric ultrathin films studied through coercive field characteristics
Polarization switching behavior of Hf-Zr-O ferroelectric ultrathin films studied through coercive field characteristics
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Polarization switching behavior of Hf-Zr-O ferroelectric ultrathin films studied through coercive field characteristics

Migita, Shinji ; Ota, Hiroyuki ; Yamada, Hiroyuki ; Shibuya, Keisuke ; Sawa, Akihito ; Toriumi, Akira

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4 [Periódico revisado por pares]

Tokyo: The Japan Society of Applied Physics

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2
Anomalous change of carrier transport property of ferroelectric Hf0.5Zr0.5O2 thin films in the first poling treatment
Anomalous change of carrier transport property of ferroelectric Hf0.5Zr0.5O2 thin films in the first poling treatment
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Anomalous change of carrier transport property of ferroelectric Hf0.5Zr0.5O2 thin films in the first poling treatment

Morita, Yukinori ; Ota, Hiroyuki ; Migita, Shinji

Japanese Journal of Applied Physics, 2022-05, Vol.61 (SC), p.SC1070 [Periódico revisado por pares]

Tokyo: IOP Publishing

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3
Design points of ferroelectric field-effect transistors for memory and logic applications as investigated by metal-ferroelectric-metal-insulator-semiconductor gate stack structures using Hf0.5Zr0.5O2 films
Design points of ferroelectric field-effect transistors for memory and logic applications as investigated by metal-ferroelectric-metal-insulator-semiconductor gate stack structures using Hf0.5Zr0.5O2 films
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Design points of ferroelectric field-effect transistors for memory and logic applications as investigated by metal-ferroelectric-metal-insulator-semiconductor gate stack structures using Hf0.5Zr0.5O2 films

Migita, Shinji ; Ota, Hiroyuki ; Toriumi, Akira

Japanese Journal of Applied Physics, 2019-11, Vol.58 (SL), p.SLLB06 [Periódico revisado por pares]

Tokyo: IOP Publishing

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4
Development of ferroelectricity with crystallographic phase transformation in Hf0.5Zr0.5O2 thin films upon initial stimulation of an electric field exceeding the coercive field
Development of ferroelectricity with crystallographic phase transformation in Hf0.5Zr0.5O2 thin films upon initial stimulation of an electric field exceeding the coercive field
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Development of ferroelectricity with crystallographic phase transformation in Hf0.5Zr0.5O2 thin films upon initial stimulation of an electric field exceeding the coercive field

Morita, Yukinori ; Onaya, Takashi ; Asanuma, Shutaro ; Ota, Hiroyuki ; Migita, Shinji

Japanese Journal of Applied Physics, 2024-04, Vol.63 (4), p.04SP53 [Periódico revisado por pares]

Tokyo: Japanese Journal of Applied Physics

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5
Quantification of 288 K local photothermal heating and miniaturization in Si plasmonic waveguides integrated with resonators
Quantification of 288 K local photothermal heating and miniaturization in Si plasmonic waveguides integrated with resonators
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Quantification of 288 K local photothermal heating and miniaturization in Si plasmonic waveguides integrated with resonators

Ota, Nana ; Shinohara, Kota ; Hasumi, Masahiko ; Shimizu, Hiromasa

Japanese Journal of Applied Physics, 2023-04, Vol.62 (4), p.42002 [Periódico revisado por pares]

Tokyo: IOP Publishing

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6
Enhancement of ferroelectricity in sputtered HZO thin films by catalytically generated atomic hydrogen treatment
Enhancement of ferroelectricity in sputtered HZO thin films by catalytically generated atomic hydrogen treatment
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Enhancement of ferroelectricity in sputtered HZO thin films by catalytically generated atomic hydrogen treatment

Mohit ; Wen, Yuli ; Hara, Yuki ; Migita, Shinji ; Ota, Hiroyuki ; Morita, Yukinori ; Ohdaira, Keisuke ; Tokumitsu, Eisuke

Japanese Journal of Applied Physics, 2022-07, Vol.61 (SH), p.SH1004 [Periódico revisado por pares]

Tokyo: IOP Publishing

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7
Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In-Ga-Zn-O thin-film transistors
Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In-Ga-Zn-O thin-film transistors
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Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In-Ga-Zn-O thin-film transistors

Ide, Keisuke ; Kikuchi, Mitsuho ; Ota, Masato ; Sasase, Masato ; Hiramatsu, Hidenori ; Kumomi, Hideya ; Hosono, Hideo ; Kamiya, Toshio

Japanese Journal of Applied Physics, 2017-03, Vol.56 (3S), p.3-03BB03 [Periódico revisado por pares]

The Japan Society of Applied Physics

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8
Physical mechanism of source and drain resistance reduction for high-performance short-channel InGaZnO thin-film transistors
Physical mechanism of source and drain resistance reduction for high-performance short-channel InGaZnO thin-film transistors
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Physical mechanism of source and drain resistance reduction for high-performance short-channel InGaZnO thin-film transistors

Ota, Kensuke ; Sakuma, Kiwamu ; Irisawa, Toshifumi ; Tanaka, Chika ; Matsushita, Daisuke ; Saitoh, Masumi

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DF06-4 [Periódico revisado por pares]

The Japan Society of Applied Physics

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9
Electrical properties of ferroelectric Y-doped Hf–Zr–O thin films prepared by chemical solution deposition
Electrical properties of ferroelectric Y-doped Hf–Zr–O thin films prepared by chemical solution deposition
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Electrical properties of ferroelectric Y-doped Hf–Zr–O thin films prepared by chemical solution deposition

Sasaki, Keisuke ; Mohit ; Hashiguchi, Sho ; Tokumitsu, Eisuke

Japanese Journal of Applied Physics, 2022-11, Vol.61 (SN), p.SN1027 [Periódico revisado por pares]

Tokyo: IOP Publishing

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10
Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process
Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process
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Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process

Mohit ; Murakami, Tatsuya ; Haga, Ken-ichi ; Tokumitsu, Eisuke

Japanese Journal of Applied Physics, 2020-11, Vol.59 (SP), p.SPPB03 [Periódico revisado por pares]

Tokyo: IOP Publishing

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