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Refinado por: Nome da Publicação: Japanese Journal Of Applied Physics remover assunto: Substrates remover
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1
Structural study of single Shockley stacking faults terminated near substrate/epilayer interface in 4H-SiC
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Structural study of single Shockley stacking faults terminated near substrate/epilayer interface in 4H-SiC

Nishio, Johji ; Ota, Chiharu ; Iijima, Ryosuke

Japanese Journal of Applied Physics, 2022-05, Vol.61 (SC), p.SC1005 [Periódico revisado por pares]

Tokyo: IOP Publishing

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2
Partial dislocation structures at expansion terminating areas of bar-shaped single Shockley-type stacking faults and basal plane dislocations at the origin in 4H-SiC
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Partial dislocation structures at expansion terminating areas of bar-shaped single Shockley-type stacking faults and basal plane dislocations at the origin in 4H-SiC

Nishio, Johji ; Ota, Chiharu ; Iijima, Ryosuke

Japanese Journal of Applied Physics, 2023-04, Vol.62 (SC), p.SC1001 [Periódico revisado por pares]

Tokyo: IOP Publishing

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3
Study of deep levels in the Mg2Si grown by vertical Bridgeman method
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Study of deep levels in the Mg2Si grown by vertical Bridgeman method

Fukushima, Kouki ; Mizunuma, Naoki ; Uematsu, Tatsuya ; Shimizu, Kyoko ; Ota, Takehiro ; Tsunoda, Isao ; Yoneoka, Masashi ; Udono, Haruhiko ; Takakura, Kenichiro

Japanese Journal of Applied Physics, 2023-05, Vol.62 (SD), p.SD1012 [Periódico revisado por pares]

Tokyo: IOP Publishing

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4
Preparation of {100}-oriented (1−x)(Bi,K)TiO3−xCaTiO3 solid-solution epitaxial films by the hydrothermal method and their ferroelectric and piezoelectric properties
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Preparation of {100}-oriented (1−x)(Bi,K)TiO3−xCaTiO3 solid-solution epitaxial films by the hydrothermal method and their ferroelectric and piezoelectric properties

Murashita, Taichi ; Hu, Yuxian ; Takahashi, Yuma ; Ota, Reika ; Okamoto, Kazuki ; Funakubo, Hiroshi

Japanese Journal of Applied Physics, 2023-11, Vol.62 (SM), p.SM1012 [Periódico revisado por pares]

Tokyo: IOP Publishing

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5
Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity
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Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity

Lu, Xiangmeng ; Kumagai, Naoto ; Minami, Yasuo ; Kitada, Takahiro

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4 [Periódico revisado por pares]

Tokyo: The Japan Society of Applied Physics

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6
Preparation of Pb(Mg1/3Nb2/3)TiO3–PbTiO3 thick films with highly preferred orientation via screen printing
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Preparation of Pb(Mg1/3Nb2/3)TiO3–PbTiO3 thick films with highly preferred orientation via screen printing

Sakai, Yuichi ; Karaki, Tomoaki

Japanese Journal of Applied Physics, 2023-11, Vol.62 (SM), p.SM1004 [Periódico revisado por pares]

Tokyo: IOP Publishing

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7
Determination of anisotropic optical properties of MOCVD grown m-plane α-(Al x Ga1−x )2O3 alloys
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Determination of anisotropic optical properties of MOCVD grown m-plane α-(Al x Ga1−x )2O3 alloys

Kluth, Elias ; Anhar Uddin Bhuiyan, A F M ; Meng, Lingyu ; Bläsing, Jürgen ; Zhao, Hongping ; Strittmatter, André ; Goldhahn, Rüdiger ; Feneberg, Martin

Japanese Journal of Applied Physics, 2023-05, Vol.62 (5), p.051001 [Periódico revisado por pares]

Tokyo: IOP Publishing

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8
Development of pupil divided optics with magnification correction for high NA oblique imaging
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Development of pupil divided optics with magnification correction for high NA oblique imaging

Arima, Eiji ; Urano, Yuta ; Honda, Toshifumi ; Matsumoto, Shunichi

Japanese Journal of Applied Physics, 2022-12, Vol.61 (12), p.122002 [Periódico revisado por pares]

Tokyo: IOP Publishing

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9
Spatial structures of rf ring-shaped magnetized sputtering plasmas with two facing cylindrical ZnO/Al2O3 targets
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Spatial structures of rf ring-shaped magnetized sputtering plasmas with two facing cylindrical ZnO/Al2O3 targets

Ohtsu, Yasunori ; Hara, Kousuke ; Imoto, Shoma ; Schulze, Julian ; Yasunaga, Takeshi ; Ikegami, Yasuyuki

Japanese Journal of Applied Physics, 2023-07, Vol.62 (SI), p.SI1007 [Periódico revisado por pares]

Tokyo: IOP Publishing

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10
The ferroelectric orthorhombic phase formation of Hf0.5Zr0.5O2 thin films on (−201) β-Ga2O3 substrate by atomic layer deposition
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The ferroelectric orthorhombic phase formation of Hf0.5Zr0.5O2 thin films on (−201) β-Ga2O3 substrate by atomic layer deposition

Naito, K. ; Yamaguchi, K. ; Yoshimura, T. ; Fujimura, N.

Japanese Journal of Applied Physics, 2023-11, Vol.62 (SM), p.SM1018 [Periódico revisado por pares]

Tokyo: IOP Publishing

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