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Refinado por: Base de dados/Biblioteca: Engineered Materials Abstracts remover Nome da Publicação: Japanese Journal Of Applied Physics remover
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1
Single crystalline In-Ga-Zn oxide films grown from c-axis aligned crystalline materials and their transistor characteristics
Single crystalline In-Ga-Zn oxide films grown from c-axis aligned crystalline materials and their transistor characteristics
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Single crystalline In-Ga-Zn oxide films grown from c-axis aligned crystalline materials and their transistor characteristics

Yamada, Yoshinori ; Matsubayashi, Daisuke ; Matsuda, Shinpei ; Sato, Yuhei ; Ota, Masashi ; Ito, Daigo ; Tsubuku, Masashi ; Takahashi, Masahiro ; Hirohashi, Takuya ; Sakakura, Masayuki ; Yamazaki, Shunpei

Japanese Journal of Applied Physics, 2014-09, Vol.53 (9), p.91102-1-091102-6 [Periódico revisado por pares]

The Japan Society of Applied Physics

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2
Heated ion implantation for high-performance and highly reliable silicon-on-insulator complementary metal-oxide-silicon fin field-effect transistors
Heated ion implantation for high-performance and highly reliable silicon-on-insulator complementary metal-oxide-silicon fin field-effect transistors
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Heated ion implantation for high-performance and highly reliable silicon-on-insulator complementary metal-oxide-silicon fin field-effect transistors

Mizubayashi, Wataru ; Onoda, Hiroshi ; Nakashima, Yoshiki ; Ishikawa, Yuki ; Matsukawa, Takashi ; Endo, Kazuhiko ; Liu, Yongxun ; O uchi, Shinichi ; Tsukada, Junichi ; Yamauchi, Hiromi ; Migita, Shinji ; Morita, Yukinori ; Ota, Hiroyuki ; Masahara, Meishoku

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DA06-7 [Periódico revisado por pares]

The Japan Society of Applied Physics

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3
Functionally Gradient Material Ceramics of Hydroxyapatite and Yttria Partially Stabilized Zirconia Prepared by Spark Plasma Sintering for Biocompatibility and Mechanical Strength
Functionally Gradient Material Ceramics of Hydroxyapatite and Yttria Partially Stabilized Zirconia Prepared by Spark Plasma Sintering for Biocompatibility and Mechanical Strength
Material Type:
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Functionally Gradient Material Ceramics of Hydroxyapatite and Yttria Partially Stabilized Zirconia Prepared by Spark Plasma Sintering for Biocompatibility and Mechanical Strength

Kawagoe, Daisuke ; Eda, Hokuto ; Shinohara, Akiko ; Nakata, Satoshi

Japanese Journal of Applied Physics, 2013-01, Vol.52 (1), p.01AM03-01AM03-4 [Periódico revisado por pares]

The Japan Society of Applied Physics

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4
Dry etching of Al-rich AlGaAs with silicon nitride masks for photonic crystal fabrication
Dry etching of Al-rich AlGaAs with silicon nitride masks for photonic crystal fabrication
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Dry etching of Al-rich AlGaAs with silicon nitride masks for photonic crystal fabrication

Zhang, Xiuyu ; Togano, Yuji ; Hashimura, Kentaro ; Morifuji, Masato ; Kondow, Masahiko

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4), p.42003-1-042003-4 [Periódico revisado por pares]

The Japan Society of Applied Physics

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5
Recent Advances and Future Prospects in Functional-Oxide Nanoelectronics: The Emerging Materials and Novel Functionalities that are Accelerating Semiconductor Device Research and Development
Recent Advances and Future Prospects in Functional-Oxide Nanoelectronics: The Emerging Materials and Novel Functionalities that are Accelerating Semiconductor Device Research and Development
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Recent Advances and Future Prospects in Functional-Oxide Nanoelectronics: The Emerging Materials and Novel Functionalities that are Accelerating Semiconductor Device Research and Development

Akinaga, Hiroyuki

Japanese Journal of Applied Physics, 2013-10, Vol.52 (10), p.100001-100001-12 [Periódico revisado por pares]

The Japan Society of Applied Physics

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6
Phase refractive index dispersions of organic oligomer crystals with different molecular alignments
Phase refractive index dispersions of organic oligomer crystals with different molecular alignments
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Phase refractive index dispersions of organic oligomer crystals with different molecular alignments

Sakurai, Yusaku ; Hayashi, Waka ; Yamao, Takeshi ; Hotta, Shu

Japanese Journal of Applied Physics, 2014-02, Vol.53 (2S), p.2-1-02BB01-6 [Periódico revisado por pares]

The Japan Society of Applied Physics

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7
Fabrication of Polymer Microneedle Electrodes Coated with Nanoporous Parylene
Fabrication of Polymer Microneedle Electrodes Coated with Nanoporous Parylene
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Fabrication of Polymer Microneedle Electrodes Coated with Nanoporous Parylene

Nishinaka, Yuya ; Jun, Rina ; Prihandana, Gunawan Setia ; Miki, Norihisa

Japanese Journal of Applied Physics, 2013-06, Vol.52 (6), p.06GL10-06GL10-5 [Periódico revisado por pares]

The Japan Society of Applied Physics

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8
AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process
AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process
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AlGaN/GaN Metal--Oxide--Semiconductor High-Electron-Mobility Transistors with a High Breakdown Voltage of 1400 V and a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process

Liu, Xinke ; Zhan, Chunlei ; Chan, Kwok Wai ; Owen, Man Hon Samuel ; Liu, Wei ; Chi, Dong Zhi ; Tan, Leng Seow ; Chen, Kevin Jing ; Yeo, Yee-Chia

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CF06-04CF06-5 [Periódico revisado por pares]

The Japan Society of Applied Physics

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9
Fabrication of dynamic oxide semiconductor random access memory with 3.9 fF storage capacitance and greater than 1 h retention by using c-axis aligned crystalline oxide semiconductor transistor with L of 60 nm
Fabrication of dynamic oxide semiconductor random access memory with 3.9 fF storage capacitance and greater than 1 h retention by using c-axis aligned crystalline oxide semiconductor transistor with L of 60 nm
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Fabrication of dynamic oxide semiconductor random access memory with 3.9 fF storage capacitance and greater than 1 h retention by using c-axis aligned crystalline oxide semiconductor transistor with L of 60 nm

Onuki, Tatsuya ; Kato, Kiyoshi ; Nomura, Masumi ; Yakubo, Yuto ; Nagatsuka, Shuhei ; Matsuzaki, Takanori ; Hondo, Suguru ; Hata, Yuki ; Okazaki, Yutaka ; Nagai, Masaharu ; Atsumi, Tomoaki ; Sakakura, Masayuki ; Okuda, Takashi ; Yamamoto, Yoshitaka ; Yamazaki, Shunpei

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DD07-5 [Periódico revisado por pares]

The Japan Society of Applied Physics

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10
High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures
High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures
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High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures

Maeda, Narihiko ; Hiroki, Masanobu ; Sasaki, Satoshi ; Harada, Yuichi

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN18-08JN18-4, Article 08JN18 [Periódico revisado por pares]

The Japan Society of Applied Physics

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