Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Photomodulated electron-spin resonance in amorphous siliconHattori, K. ; Ota, Y. ; Sato, K. ; Okamoto, H.Journal of applied physics, 1998-11, Vol.84 (9), p.4974-4978 [Periódico revisado por pares]Texto completo disponível |
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2 |
Material Type: Artigo
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Properties of molecular-beam-epitaxy-grown and O+-implanted GaAs and their application to the formation of a buried collector of an AlGaAs/GaAs heterojunction bipolar transistorOTA, Y ; YANAGIHARA, M ; INADA, MJournal of applied physics, 1988-07, Vol.64 (2), p.926-930 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Silicon molecular beam epitaxy with simultaneous ion implant dopingOta, YusukeJournal of applied physics, 1980-02, Vol.51 (2), p.1102-1110 [Periódico revisado por pares]Texto completo disponível |
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4 |
Material Type: Artigo
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Effects of substituted elements into the Cr layer on a CoNiCr/Cr sputtered hard diskTANI, N ; HASHIMOTO, M ; MURATA, Y ; ISHIKAWA, M ; OTA, Y ; NAKAMURA, KJournal of applied physics, 1990-06, Vol.67 (12), p.7507-7509 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Perpendicular magnetic anisotropy in TbFeCo films studied by magnetic Compton scatteringSakurai, H. ; Ota, M. ; Liu, X. ; Morisako, A. ; Sakurai, Y. ; Itou, M. ; Nagao, T. ; Koizumi, A.Journal of applied physics, 2007-07, Vol.102 (1), p.013902-013902-5 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Protective coating on the p-n junction of In sub(0.53)Ga sub(0.47)As/InP p-i-n planar diodes by vacuum-evaporated glassOta, Y ; Hu, P H-S ; Seabury, C W ; Brown, M GJournal of applied physics, 1987-01, Vol.61 (1), p.404-410 [Periódico revisado por pares]Texto completo disponível |
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7 |
Material Type: Artigo
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Protective coating on the p-n junction of In0.53Ga0.47As/InP p-i-n planar diodes by vacuum-evaporated glassOTA, Y ; HU, P. H.-S ; SEABURY, C. W ; BROWN, M. GJournal of applied physics, 1987, Vol.61 (1), p.404-410 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Thermal behavior of thick vacuum evaporated polycrystalline silicon layerOTA, Y ; CLAPPER, R. A ; SCHIMMEL, D. GJournal of applied physics, 1985-01, Vol.57 (10), p.4599-4609 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Single-crystal CsBr infrared fibersMimura, Y ; Okamura, Y ; Ota, CJournal of applied physics, 1982-01, Vol.53 (8), p.5491-5497 [Periódico revisado por pares]Texto completo disponível |
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10 |
Material Type: Artigo
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Thermal spin pumping and magnon-phonon-mediated spin-Seebeck effectUchida, K. ; Ota, T. ; Adachi, H. ; Xiao, J. ; Nonaka, T. ; Kajiwara, Y. ; Bauer, G. E. W. ; Maekawa, S. ; Saitoh, E.Journal of applied physics, 2012-05, Vol.111 (10), p.103903-103903-12 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |