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1
Large InAs/GaAs quantum dots optically active in the long-wavelength region
Large InAs/GaAs quantum dots optically active in the long-wavelength region
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Artigo de Congresso 		Adicionar ao Meu Espaço

Large InAs/GaAs quantum dots optically active in the long-wavelength region

M J da Silva S Martini; T. E Lamas (Tomás Erikson); A. A Quivy (Alain André); Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto); International Conference on Defects in Semiconductors (22. 2003 Aarhus)

Book of Abstracts Amsterdam : Elsevier Science, 2003

Amsterdam Elsevier Science 2003

Item não circula. Consulte sua biblioteca.(Acessar)

2
The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells
The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells
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Artigo de Congresso 		Adicionar ao Meu Espaço

The influence of and InAs layer on the quantum mobility of two-dimensional electron GAS in GaAs/InGaAg selectively doped quantum wells

I. R Pagnossin Emílio Carlos Nelli Silva 1968-; A. A Quivy (Alain André); S Martini; C. S Sergio; J. R Leite (José Roberto); Encontro Nacional de Fisica da Matéria Condensada (27. 2004 Poços de Caldas, MG)

Resumos São Paulo : SBF, 2004

São Paulo SBF 2004

Acesso online

3
Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces

A. A. Quivy (Alain André) S Martini; T. E Lamas (Tomás Erikson); M. J. da Silva; Euzi Conceicao Fernandes da Silva; Brazilian Workshop on Semiconductor Physics (11. 2003 Fortaleza)

Book of Abstract Fortaleza : DF/UFC, 2003

Fortaleza DF/UFC 2003

Item não circula. Consulte sua biblioteca.(Acessar)

4
Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
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Artigo 		Adicionar ao Meu Espaço

Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy

S Martini A. A Quivy (Alain André); Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Applied Physics Letters Menasha v. 81, n. 15, p. 2863-2865, 2002

Menasha 2002

Acesso online

5
Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
Material Type:
Artigo 		Adicionar ao Meu Espaço

Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy

S Martini A. A Quivy (Alain André); Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Applied Physics Letters Menasha v. 81, n. 15, p. 2863-2865, 2002

Menasha 2002

Acesso online

6
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
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Artigo 		Adicionar ao Meu Espaço

Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface

S Martini A. A Quivy (Alain André); T. E Lamas (Tomás Erikson); M J da Silva; Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Journal of Crystal Growth Amsterdam v. 251, n. 1-4, p. 101-105, 2003

Amsterdam 2003

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7
InAs/GaAs quantum dots optically active at 1.5 'mu'
InAs/GaAs quantum dots optically active at 1.5 'mu'
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InAs/GaAs quantum dots optically active at 1.5 'mu'

M J da Silva A. A Quivy (Alain André); S Martini; T E Lamas; Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Applied Physics Letters Woodbury v. 82, n. 16, p. 2646-2648, 2003

Woodbury 2003

Acesso online

8
Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
Material Type:
Artigo 		Adicionar ao Meu Espaço

Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix

M J da Silva A. A Quivy (Alain André); S Martini; T. E Lamas (Tomás Erikson); Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Journal of Crystal Growth Amsterdam v. 251, n. 1-4, p. 181-185, 2003

Amsterdam 2003

Acesso online

9
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3 'mu'm

M J da Silva S Martini; T. E Lamas (Tomás Erikson); A. A Quivy (Alain André); Euzi Conceicao Fernandes da Silva; J. R Leite (José Roberto)

Microelectronics Journal Oxford v. 34, n. 5-8, p. 631-633, 2003

Oxford 2003

Acesso online

10
Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction
Material Type:
Artigo 		Adicionar ao Meu Espaço

Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction

S Martini A. A Quivy (Alain André); M J da Silva; T E Lamas; E C F da Silva; J. R Leite (José Roberto); E Abramof

Journal of Applied Physics v. 94, n. 11, p. 7050-7052, 2003

New york 2003

Acesso online

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Deste Autor:

  1. Silva, E
  2. Quivy, A
  3. Martini, S
  4. Leite, J
  5. Silva, M

Neste Assunto:

  1. Estrutura Eletrônica
  2. Difração Por Raios X
  3. Superfície Física
  4. Semicondutores
  5. Óptica

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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