Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxyAndré Bohomoletz Henriques E T R Chidley; S K Haywood; R J Nicholas; N J Mason; P J Walkerv.6 , p.45, 1991 Semiconductor Science and Technology1991Item não circula. Consulte sua biblioteca.(Acessar) |
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2 |
Material Type: Artigo
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Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxyAndré Bohomoletz Henriques E T R Chidley; S K Haywood; R J Nicholas; N J Mason; P J Walkerv.6 , p.45, 1991 Semiconductor Science and Technology1991Item não circula. Consulte sua biblioteca.(Acessar) |
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3 |
Material Type: Artigo
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Lateral β-Ga2O3 field effect transistorsChabak, Kelson D ; Leedy, Kevin D ; Green, Andrew J ; Mou, Shin ; Neal, Adam T ; Asel, Thaddeus ; Heller, Eric R ; Hendricks, Nolan S ; Liddy, Kyle ; Crespo, Antonio ; Miller, Nicholas C ; Lindquist, Miles T ; Moser, Neil A ; Fitch, Robert C ; Walker, Dennis E ; Dorsey, Donald L ; Jessen, Gregg HSemiconductor science and technology, 2020, Vol.35 (1) [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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4 |
Material Type: Artigo
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Effect of HCl cleaning on InSb–Al 2 O 3 MOS capacitorsVavasour, Oliver J ; Jefferies, Richard ; Walker, Marc ; Roberts, Joseph W ; Meakin, Naomi R ; Gammon, Peter M ; Chalker, Paul R ; Ashley, TimSemiconductor science and technology, 2019-03, Vol.34 (3), p.35032 [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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Effect of HCl cleaning on InSb-Al2O3 MOS capacitorsVavasour, Oliver J ; Jefferies, Richard ; Walker, Marc ; Roberts, Joseph W ; Meakin, Naomi R ; Gammon, Peter M ; Chalker, Paul R ; Ashley, TimSemiconductor science and technology, 2019-03, Vol.34 (3) [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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6 |
Material Type: Artigo
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Growth and structural characterization of GaAsBi GaAs multiple quantum wellsRichards, Robert D ; Bastiman, Faebian ; Walker, David ; Beanland, Richard ; David, John P RSemiconductor science and technology, 2015-09, Vol.30 (9), p.94013 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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7 |
Material Type: Artigo
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Lateral β-Ga 2 O 3 field effect transistorsChabak, Kelson D ; Leedy, Kevin D ; Green, Andrew J ; Mou, Shin ; Neal, Adam T ; Asel, Thaddeus ; Heller, Eric R ; Hendricks, Nolan S ; Liddy, Kyle ; Crespo, Antonio ; Miller, Nicholas C ; Lindquist, Miles T ; Moser, Neil A ; Fitch, Robert C ; Walker, Dennis E ; Dorsey, Donald L ; Jessen, Gregg HSemiconductor science and technology, 2020-01, Vol.35 (1), p.13002 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Artigo
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Improved photoluminescence from electrochemically passivated GaSbSalesse, A ; Alabedra, R ; Chen, Y ; Lakrimi, M ; Nicholas, R J ; Mason, N J ; Walker, P JSemiconductor science and technology, 1997-04, Vol.12 (4), p.413-418 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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9 |
Material Type: Artigo
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Photoluminescence of GaSb grown by metal-organic vapour phase epitaxyChidley, E T R ; Haywood, S K ; Henriques, A B ; Mason, N J ; Nicholas, R J ; Walker, P JSemiconductor science and technology, 1991-01, Vol.6 (1), p.45-53 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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10 |
Material Type: Artigo
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Interface composition dependence of the band offset in InAs/GaSbDaly, M S ; Symons, D M ; Lakrimi, M ; Nicholas, R J ; Mason, N J ; Walker, P JSemiconductor science and technology, 1996-05, Vol.11 (5), p.L823-826 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |